V. S. Varavin

MCT infrared photodiodes on the basis of graded gap P-p heterojunction grown by MBE HgCdTe epilayers on GaAs

Sergey A. Dvoretsky, A. O. Suslyakov, V. V. Vasiliev, 2006, SPIE Photonics Europe.

Infrared photoconductors fabricated on Hg1-xCdxTe film grown by molecular beam epitaxy

V. V. Vasilyev, Sergey A. Dvoretsky, Yuri G. Sidorov, 1996, Defense + Commercial Sensing.

MCT heterostructure design and growth by MBE for IR devices

V. V. Vasilyev, Sergey A. Dvoretsky, Victor N. Ovsyuk, 2001, International Conference on Material Science and Material Properties for Infrared Optoelectronics.

HgCdTe epilayers on GaAs: growth and devices

Sergey A. Dvoretsky, Victor N. Ovsyuk, Yuri G. Sidorov, 2003, Saratov Fall Meeting.

Superluminescence from optically pumped CdxHg1-xTe heterostructures on GaAs and Si substrates

V. S. Varavin, A. A. Babenko, A. A. Andronov, 2007, International Conference on Photoelectronics and Night Vision Devices.

Fabrication and characteristics of long-wavelength infrared planar photodiodes on molecular beam epitaxial p-HgCdTe films

V. V. Vasilyev, Sergey A. Dvoretsky, Yuri G. Sidorov, 1996, Defense + Commercial Sensing.

Electrical properties of MIS-photodetectors in base of MBE graded-band HgCdTe

Sergey A. Dvoretsky, V. V. Vasiliev, V. S. Varavin, 2005, Optics + Optoelectronics.

Focal plane arrays based on HgCdTe epitaxial layers MBE-grown on GaAs substrates

V. V. Vasilyev, Sergey A. Dvoretsky, Dmitrii G. Esaev, 1997, Defense, Security, and Sensing.

The state of the art and prospects of CdxHg1-xTe molecular beam epitaxy

V. A. Kartashev, Sergey A. Dvoretsky, V. S. Varavin, 2003, Saratov Fall Meeting.