A. Severino

发表

Barkhausen noise and high induction losses in non-oriented electrical steel

R. L. Sommer, A. Gündel, F. Landgraf, 2004 .

Domain structure in Joule-heated CoFeSiB glass-covered amorphous microwires probed by magnetoimpedance and ferromagnetic resonance

R. L. Sommer, M. Carara, A. Severino, 2003 .

Impact of growth conditions on stress and quality of aluminum nitride (AlN) thin buffer layers

F. Iucolano, A. Severino, 2016 .

An Approach to Predict 4H-SiC Wafer Bending after Back Side Thinning by Substrate Resistivity Analysis

S. Lorenti, N. Piluso, S. Coffa, 2019 .

Thermal Annealing of High Dose P Implantation in 4H-SiC

E. G. Barbagiovanni, L. Calcagno, M. Zimbone, 2019, Materials Science Forum.

Growth of 4H-SiC Epitaxial Layer through Optimization of Buffer Layer

S. Lorenti, P. Fiorenza, F. La Via, 2018, Materials Science Forum.

Induced anisotropy and magnetostriction in Co70.4Fe4.6Si15B10

Abel D. Santos, F. Missell, A. Severino, 1991 .

Induced anisotropy and magnetostriction in Co 70.4 Fe 4.6 Si 15 B 10

Abel D. Santos, F. Missell, A. Severino, 1991 .

New analysis of the small-angle-magnetization-rotation method for magnetostriction measurements on amorphous ribbons

F. Missell, A. Severino, 1987 .

Status of 3 C ‐ SiC Growth and Device Technology

M. Zimbone, R. Nipoti, P. Wellmann, 2021, Wide Bandgap Semiconductors for Power Electronics.

Post-Growth Process Effect on Hetero-Epitaxial 3C-SiC Wafer Bow and Residual Stress

G. D'arrigo, A. La Magna, M. Camarda, 2013 .

Wafer Cut Effect on Hetero-Epitaxial 3C-SiC Film for MEMS Application

A. Magna, G. D'arrigo, M. Camarda, 2012 .

Bow in 6 Inch High-Quality Off-Axis (111) 3C-SiC Films

G. Condorelli, M. Camarda, F. La Via, 2010 .

High-quality 6 inch (111) 3C-SiC films grown on off-axis (111) Si substrates

C. Bongiorno, G. Condorelli, A. Magna, 2010 .

Magnetostriction, Barkhausen noise and magnetization processes in E110 grade non-oriented electrical steels

F. Bohn, R. L. Sommer, A. Gündel, 2007 .

Preferential oxidation of stacking faults in epitaxial off-axis (111) 3C-SiC films

C. Bongiorno, A. Magna, S. Scalese, 2009 .

Impact of Dislocation on Warpage of Thinned 4H-SiC Wafers

R. Anzalone, A. Severino, B. Cafra, 2022, Materials Science Forum.

Conduction Mechanisms at Interface of AlN/SiN Dielectric Stacks with AlGaN/GaN Heterostructures for Normally-off High Electron Mobility Transistors: Correlating Device Behavior with Nanoscale Interfaces Properties.

F. Giannazzo, G. Greco, F. Roccaforte, 2017, ACS applied materials & interfaces.

The Impact of Defect Density on Mechanical Characteristics of 4H-SiC Substrates

N. Piluso, A. Severino, B. Cafra, 2022, Materials Science Forum.

High Temperature Etching for Threading Dislocation Investigation on GaN Epi-Layer

G. Greco, F. Roccaforte, P. Fiorenza, 2022, Materials Science Forum.

Micro‐Raman analysis and finite‐element modeling of 3 C‐SiC microstructures

A. Magna, M. Camarda, N. Piluso, 2013 .

Giant magnetoimpedance in glass-covered amorphous microwires at microwave frequencies

R. L. Sommer, L. F. Schelp, A. Severino, 2002 .

Consideration on the Thermal Expansion of 3C-SiC Epitaxial Layer on Si Substrates

A. La Magna, M. Camarda, F. La Via, 2012 .

Bow Free 4″ Diameter 3C-SiC Epilayers Formed upon Wafer-Bonded Si/SiC Substrates

C. Fisher, P. Mawby, A. Sánchez, 2012 .

Extended Study of the Step-Bunching Mechanism during the Homoepitaxial Growth of SiC

A. La Magna, M. Camarda, F. La Via, 2009 .

High Quality Single Crystal 3C-SiC(111) Films Grown on Si(111)

S. Saddow, C. Locke, G. Litrico, 2009 .

Growth Rate Effect on 3C-SiC Film Residual Stress on (100) Si Substrates

S. Saddow, C. Locke, A. Volinsky, 2010 .

Towards Large Area (111)3C-SiC Films Grown on Off-Oriented (111)Si

C. Bongiorno, G. Condorelli, M. Camarda, 2009 .

3C-SiC Heteroepitaxy on (100), (111) and (110) Si Using Trichlorosilane (TCS) as the Silicon Precursor.

C. Bongiorno, G. Condorelli, P. Fiorenza, 2008 .

Effects of Thermal Annealing Processes in Phosphorous Implanted 4H-SiC Layers

L. Calcagno, G. Arena, F. Giannazzo, 2019, Materials Science Forum.

Dislocations Propagation Study Trough High-Resolution 4H-SiC Substrate Mapping

G. Arena, S. Lorenti, N. Piluso, 2019, Materials Science Forum.

Effect of high temperature annealing (T > 1650 °C) on the morphological and electrical properties of p-type implanted 4H-SiC layers

D. Corso, F. Giannazzo, G. Greco, 2019, Materials Science in Semiconductor Processing.

Temperature-dependent Fowler-Nordheim electron barrier height in SiO2/4H-SiC MOS capacitors

C. Bongiorno, S. Lorenti, G. Nicotra, 2017, 1903.08572.

Properties of SiO2/4H-SiC Interfaces with an Oxide Deposited by a High-Temperature Process

S. Lorenti, F. Roccaforte, F. Iucolano, 2016, 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM).

SiC Films and Coatings

M. Reyes, S. Saddow, C. Locke, 2012 .

Structural defects in (100) 3C-SiC heteroepitaxy: Influence of the buffer layer morphology on generation and propagation of stacking faults and microtwins

S. Saddow, C. Frewin, C. Bongiorno, 2009 .

From thin film to bulk 3C-SiC growth: Understanding the mechanism of defects reduction

Marco Mauceri, F. La Via, Corrado Bongiorno, 2018 .

Stress fields analysis in 3C–SiC free-standing microstructures by micro-Raman spectroscopy

M. Camarda, N. Piluso, R. Anzalone, 2012 .

3C-SiC Film Growth on Si Substrates

S. Saddow, C. Locke, A. Magna, 2011 .

Influence of the sample length on the switching process of magnetostrictive amorphous wire

C. Gómez-Polo, P. Marín, A. Severino, 1992 .

Growth and processing of heteroepitaxial 3C-SiC films for electronic devices applications

M. Camarda, N. Piluso, R. Anzalone, 2012 .

Correlation between macroscopic and microscopic stress fields: Application to the 3C–SiC/Si heteroepitaxy

A. Magna, M. Camarda, N. Piluso, 2013 .

Effect of the miscut direction in (111) 3C-SiC film growth on off-axis (111)Si

G. Condorelli, A. Magna, M. Camarda, 2009 .

Carbonization Study of Different Silicon Orientations

C. Bongiorno, G. Condorelli, G. Foti, 2007 .

Thin crystalline 3C-SiC layer growth through carbonization of differently oriented Si substrates

C. Bongiorno, S. Scalese, G. Foti, 2007 .

Induced anisotropy in nanocrystalline FeCuNbSiB

F. Missell, M. Emura, A. Severino, 1994 .

Changes in induced anisotropy and magnetostriction in Co-based amorphous alloys

A. Severino, A. D. Santos, Frank P. Missell, 1991 .

Stress and annealing dependence of magnetic properties of amorphous Co-Fe-Si-B Alloys

F. Missell, A. Severino, A. D. Santos, 1986 .

Stress dependence of the magnetic properties of amorphous Co-Fe-Si-B alloys

Abel D. Santos, F. Missell, A. Severino, 1986 .

Raman Stress Characterization of Hetero-Epitaxial 3C-SiC Free Standing Structures

A. La Magna, M. Camarda, F. La Via, 2011 .

Optical investigation of bulk electron mobility in 3C–SiC films on Si substrates

A. Magna, M. Camarda, N. Piluso, 2010 .

Raman Characterization of Doped 3C-SiC/Si for Different Silicon Substrates and C/Si Ratios

G. Condorelli, M. Camarda, F. La Via, 2010 .

Systematic First Principles Calculations of the Effects of Stacking Fault Defects on the 4H-SiC Band Structure

P. Delugas, A. La Magna, M. Camarda, 2010 .

Effect of interface and bulk charges on the breakdown of nitrided gate oxide on 4H-SiC

E. Zanetti, S. Patane, B. Mazza, 2021, 2021 IEEE International Reliability Physics Symposium (IRPS).

Effect of Mo interlayer on thermal stability of polycrystalline NiSi thin films

C. Bongiorno, A. Magna, E. Rimini, 2007 .

Patterned substrate with inverted silicon pyramids for 3C–SiC epitaxial growth: A comparison with conventional (001) Si substrate

S. Saddow, C. Locke, N. Piluso, 2013 .

A Study of Structural Defects in 3C-SiC Hetero-Epitaxial Films

C. Bongiorno, F. La Via, R. Anzalone, 2010 .

3C-SiC Heteroepitaxial Growth on Inverted Silicon Pyramids (ISP)

C. Bongiorno, G. Condorelli, F. La Via, 2010 .

Heteroepitaxy of 3C-SiC on different on-axis oriented silicon substrates

S. Saddow, C. Bongiorno, G. Foti, 2009 .

Heteroepitaxial growth of (111) 3C-SiC on (110) Si substrate by second order twins

C. Bongiorno, G. Foti, G. Abbondanza, 2008 .

Curvature Evaluation of Si/3C-SiC/Si Hetero-Structure Grown by Chemical Vapor Deposition

M. Camarda, F. La Via, N. Piluso, 2014 .

Active dopant profiling and Ohmic contacts behavior in degenerate n-type implanted silicon carbide

F. Giannazzo, G. Greco, F. Roccaforte, 2020 .

On the “Step Bunching” Phenomena Observed on Etched and Homoepitaxially Grown 4H Silicon Carbide

C. Bongiorno, S. Scalese, A. La Magna, 2011 .

High growth rate 3C-SiC growth: from hetero-epitaxy to homo-epitaxy

G. Litrico, F. La Via, R. Anzalone, 2016 .

Analysis on 3C-SiC Layer Grown on Pseudomorphic-Si/Si1-xGex/Si(001) Heterostructures

S. Scalese, M. Camarda, F. La Via, 2014 .

Microtwin reduction in 3C–SiC heteroepitaxy

F. Via, A. Severino, 2010 .

Low Stress Heteroepitaxial 3C-SiC Films Characterized by Microstructure Fabrication and Finite Elements Analysis

S. Saddow, C. Locke, A. Magna, 2010 .

Residual Stress Measurement and Simulation of 3C-SiC Single and Poly Crystal Cantilevers

S. Saddow, C. Locke, F. Mancarella, 2010 .

Stress Evaluation on Hetero-Epitaxial 3C-SiC Film on (100) Si Substrates

S. Saddow, C. Locke, A. Volinsky, 2012 .

Crystal recovery from Al‐implantation induced damaging in 3C‐SiC films

F. La Via, N. Piluso, A. Severino, 2012 .

Structural Characterization of Heteroepitaxial 3C-SiC

M. Camarda, F. La Via, N. Piluso, 2012 .

3C-SiC Hetero-Epitaxial Films for Sensors Fabrication

S. Saddow, C. Locke, F. La Via, 2008 .

Stress Relaxation Study in 3C-SiC Microstructures by Micro-Raman Analysis and Finite Element Modeling

A. La Magna, F. La Via, N. Piluso, 2013 .

Micro-Raman Analysis of a Micromachined 3C-SiC Cantilever

A. La Magna, M. Camarda, F. La Via, 2012 .

Extended Characterization of the Stress Fields in the Heteroepitaxial Growth of 3C-SiC on Silicon for Sensors and Device Applications

A. La Magna, M. Camarda, F. La Via, 2012 .

Mechanical Proprieties and Residual Stress Evaluation on Heteroepitaxial 3C-SiC/Si for MEMS Application

M. Camarda, F. La Via, N. Piluso, 2012 .

Advanced Stress Analysis by Micro-Structures Realization on High Quality Hetero-Epitaxial 3C-SiC for MEMS Application

S. Saddow, C. Locke, A. La Magna, 2011 .

Impact of Threading Dislocations Detected by KOH Etching on 4H-SiC 650 V MOSFET Device Failure after Reliability Test

N. Piluso, R. Anzalone, S. Coffa, 2019 .

Innovative 3C-SiC on SiC via Direct Wafer Bonding

C. Fisher, P. Mawby, S. M. Thomas, 2013 .

Study of the Effects of Growth Rate, Miscut Direction and Postgrowth Argon Annealing on the Surface Morphology of Homoepitaxially Grown 4H Silicon Carbide Films

G. Litrico, A. La Magna, P. Fiorenza, 2013 .

Fast Growth Rate Epitaxy by Chloride Precursors

A. La Magna, M. Camarda, F. La Via, 2013 .

High Quality 4H-SiC Epitaxial Layer by Tuning CVD Process

G. Arena, S. Lorenti, F. La Via, 2019, Materials Science Forum.

Ohmic Contacts on p-Type Al-Implanted 4H-SiC Layers after Different Post-Implantation Annealings

D. Corso, F. Giannazzo, G. Greco, 2019, Materials.

Study of the Impact of Growth and Post-Growth Processes on the Surface Morphology of 4H Silicon Carbide Films

C. Bongiorno, A. La Magna, V. Raineri, 2012 .

Systematic first principles calculations of the effects of stacking faults defects on the 4H-SiC band structure

P. Delugas, A. Magna, M. Camarda, 2010 .

Dislocations Analysis on Implanted (p-Type and n-Type) 4H-SiC Epi-Layer by KOH Molten Etching

N. Piluso, R. Anzalone, S. Coffa, 2020 .

Temperature-Dependence Study of the Gate Current SiO2/4H-SiC MOS Capacitors

S. Lorenti, F. Roccaforte, F. Iucolano, 2018, Materials Science Forum.

Study of the Post-Oxidation-Annealing (POA) Process on Deposited High-Temperature Oxide (HTO) Layers as Gate Dielectric in SiC MOSFET

G. Arena, N. Piluso, A. Severino, 2019, Materials Science Forum.

High Growth Rate Process in a SiC Horizontal Reactor with HCl Addition: Structural and Electrical Characterization

L. Calcagno, A. Firrincieli, G. Foti, 2006 .