S. Ohkouchi

发表

Acceleration and suppression of photoemission of GaAs quantum dots embedded in photonic crystal microcavities

K. Sakoda, K. Asakawa, T. Mano, 2008 .

K. Asakawa, Y. Sugimoto, N. Ikeda, 2010 .

Advanced Growth Techniques of InAs-system Quantum Dots for Integrated Nanophotonic Circuits

K. Asakawa, Y. Sugimoto, N. Ikeda, 2008 .

Area-selective and Site-controlled InAs Quantum-dot Growth Techniques for Photonic Crystal-based Ultra-small Integrated Circuit

K. Asakawa, Y. Sugimoto, N. Ikeda, 2008 .

Selective growth of ordered InGaAs quantum dots on patterned substrates with nano-hole arrays

K. Asakawa, Y. Sugimoto, N. Ikeda, 2007 .

InAs Quantum Dots Grown on Selective Areas with a Metal Mask for Photonic-Crystal-Based Ultra-Small and Ultra-Fast All Optical Devices

K. Asakawa, Y. Sugimoto, N. Ikeda, 2007, 2007 IEEE 19th International Conference on Indium Phosphide & Related Materials.

Photonic Crystals and Quantum Dots: Towards Integrated Optics for Advanced Ultra-Fast All-Optical Signal Processing

O. Sigmund, P. Borel, M. Kristensen, 2006, 2006 European Conference on Optical Communications.

Selective-Area Growth of Self-Assembled InAs-QDs by Metal Mask Method for Optical Integrated Circuit Applications

K. Asakawa, Y. Sugimoto, N. Ikeda, 2006 .

Selective growth of self-assembled InAs quantum dots with the in-situ mask

K. Asakawa, H. Nakamura, S. Ohkouchi, 2004, 16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, 2004..

Drastic enhancement of optical non-linearity in InAs quantum dot embedded in photonic crystal waveguide for all-optical switch application

H. Ishikawa, Y. Tanaka, K. Asakawa, 2004, Conference on Lasers and Electro-Optics, 2004. (CLEO)..

Two‐dimensional ordering of InGaAs quantum dots formed on an artificial nano‐hole array with 100 nm periodicity

K. Asakawa, Y. Sugimoto, N. Ikeda, 2003 .

Suppression of indefinite peaks in InAs/GaAs quantum dot spectrum by low temperature capping in the indium-flush method

Y. Ota, S. Iwamoto, Y. Arakawa, 2010 .

Investigation of the Spectral Triplet in Strongly Coupled Quantum Dot–Nanocavity System

Y. Ota, S. Iwamoto, Y. Arakawa, 2009, 0906.4622.

Enhancement of Valence Band Mixing in Individual InAs/GaAs Quantum Dots by Rapid Thermal Annealing

Y. Ota, S. Iwamoto, Y. Arakawa, 2013 .

Scanning tunneling microscopy of surface structures of InAs layers on GaAs (001) substrates

S. Ohkouchi, N. Ikoma, 1996, Proceedings of 8th International Conference on Indium Phosphide and Related Materials.

InAs Island Formation Aligned along the Steps on a GaAs(001) Vicinal Surface

S. Ohkouchi, N. Ikoma, Shunsuke Ohkouchi Shunsuke Ohkouchi, 1995 .

Shape transition of GaAs islands grown on InAs (001) surfaces

S. Ohkouchi, N. Ikoma, 1994 .

Role of Steps in GaAs Heteroepitaxial Growth on InAs(001) Surfaces

S. Ohkouchi, N. Ikoma, 1994 .

GaAs Heteroepitaxial Growth on an InP (001) Substrate

I. Tanaka, S. Ohkouchi, 1991 .

Surface structures of InP and InAs thermally cleaned in an arsenic flux

I. Tanaka, S. Ohkouchi, N. Ikoma, 1994 .

Integration of Emission-Wavelength-Controlled InAs Quantum Dots for Ultra-Broadband Near-Infrared Light Source

R. Hogg, Y. Sugimoto, N. Ikeda, 2014 .

Room temperature operation of InAs-quantum-dot laser utilizing GaAs-photonic-crystal-slab-based line-defect waveguide with optical pump

Y. Tanaka, K. Asakawa, Y. Sugimoto, 2004, 2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest..

Mode identification of high-quality-factor single-defect nanocavities in quantum dot-embedded photonic crystals

A. Tomita, S. Kono, J. Ushida, 2007, cond-mat/0702234.

Advanced quantum dot and photonic crystal technologies for integrated nanophotonic circuits

Yoshinori Watanabe, Yoshimasa Sugimoto, Kiyoshi Asakawa, 2009, Microelectron. J..

In situ mask designed for selective growth of InAs quantum dots in narrow regions developed for molecular beam epitaxy system.

K. Asakawa, Y. Sugimoto, N. Ikeda, 2007, The Review of scientific instruments.

Selective growth of InAs quantum dots using In nano-dot arrays formed by nano-jet probe method

H. Ishikawa, K. Asakawa, Y. Sugimoto, 2007 .

Charged and neutral biexciton–exciton cascade in a single quantum dot within a photonic bandgap

Y. Ota, S. Iwamoto, Y. Arakawa, 2010 .

Application of real-time low-energy ion scattering spectroscopy to heterointerface formation processes of molecular beam epitaxially grown III–V compound semiconductors

N. Sugiyama, A. Hashimoto, M. Tamura, 1994 .

Optical spectroscopy of charge-tunable quantum dots emitting at 1.2 μm

A. Tomita, S. Kono, J. Fujikata, 2007, 2007 European Conference on Lasers and Electro-Optics and the International Quantum Electronics Conference.

InAs Nano-Dot Array Formation Using Nano-Jet Probe for Photonics Applications

K. Asakawa, H. Nakamura, Yusui Nakamura, 2004, Digest of Papers. 2004 International Microprocesses and Nanotechnology Conference, 2004..

Phonon-induced asymmetry in vacuum Rabi doublet for coupled quantum dot-cavity system

Y. Ota, S. Iwamoto, Y. Arakawa, 2010, CLEO/QELS: 2010 Laser Science to Photonic Applications.

Investigation of the Spectral Triplet in Strongly Coupled Quantum Dot–Nanocavity System

Y. Ota, S. Iwamoto, Y. Arakawa, 2009, 0906.4622.

Neutralization of positively charged excitonic state in single InAs quantum dot by Si delta doping

Y. Ota, S. Iwamoto, Y. Arakawa, 2010 .

Shape evolution of low density InAs quantum dots in the partial capping process by using As2 source

S. Iwamoto, Y. Arakawa, N. Kumagai, 2013 .

New method to isolate and distribute photoluminescence emissions from InAs quantum dots over a wide-wavelength range

Y. Ota, S. Iwamoto, Y. Arakawa, 2011 .

Site-controlled InAs quantum dot formation grown on the templates fabricated by the Nano-Jet Probe method

H. Ishikawa, K. Asakawa, Y. Sugimoto, 2009 .

Selective growth of stacked InAs quantum dots by using the templates formed by the Nano-Jet Probe

H. Ishikawa, K. Asakawa, Y. Sugimoto, 2008 .

Molecular beam epitaxial growth of site-controlled InAs quantum dot arrays using templates fabricated by the Nano-Jet Probe method

H. Ishikawa, K. Asakawa, Y. Sugimoto, 2008 .

Selective Formation of High Density InAs Quantum Dot Arrays Using Templates Fabricated by the Nano-Jet Probe

H. Ishikawa, K. Asakawa, Y. Sugimoto, 2007, 2007 IEEE 19th International Conference on Indium Phosphide & Related Materials.

Selective formation of InAs quantum dot arrays by direct deposition of indium nano-dots using a nano-jet probe

K. Asakawa, H. Nakamura, S. Ohkouchi, 2004, 16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, 2004..

Site-control technology for InAs quantum dot formation by direct deposition of indium nano-dots with a nano-jet probe

K. Asakawa, Yusui Nakamura, S. Ohkouchi, 2003 .

Monolithic Fabrication of Two-Color InAs Quantum Dots for Integrated Optical Devices by Using a Rotational Metal Mask

K. Asakawa, Y. Sugimoto, N. Ikeda, 2009 .

Growth of InAs/GaAs quantum dots with central emission wavelength of 1.05 μm using In-flush technique for broadband near-infrared light source

Y. Sugimoto, N. Ikeda, N. Ozaki, 2013 .

Multi-color quantum dot ensembles grown in selective-areas for shape-controlled broadband light source

K. Asakawa, R. Hogg, Y. Sugimoto, 2011 .

Two Dimensional Semiconductor-Based Photonic Crystal Slab Waveguides for Ultra-Fast Optical Signal Processing Devices (INVITED)

Hiroshi Ishikawa, Yoshimasa Sugimoto, Koji Ishida, 2004 .

Scanning Tunneling Microscopy of Initial Stages of GaAs Heteroepitaxy on Lattice-Mismatched Substrates

S. Ohkouchi, Ichiro Tanaka Ichiro Tanaka, Nobuyuki Ikoma Nobuyuki Ikoma, 1994 .

Observation of the InP surface thermally cleaned in an arsenic flux using a scanning tunneling microscope

I. Tanaka, S. Ohkouchi, 1991 .

Atomic arrangement in a CuPt-B-type ordered GaAsSb layer grown by molecular beam epitaxy observed by cross sectional scanning tunneling microscope

Y. Kawamura, A. Gomyo, S. Ohkouchi, 2007 .

Cross-sectional scanning tunneling microscopy observation of atomic arrangement in triple period-A type ordered AlInAs alloy

A. Gomyo, K. Makita, S. Ohkouchi, 2005 .

Atomic Arrangement in a Triple-period A-type Ordered GaInP Layer Grown with Sb Addition during Metal Organic Vapor Phase Epitaxy Observed by Cross Sectional Scanning Tunneling Microscope

T. Ichihashi, A. Gomyo, S. Ohkouchi, 2005 .

Scanning tunneling microscopy observations of surface structures on ordered GaInAs layers grown on InP

A. Gomyo, S. Ohkouchi, 1998 .

Optical characterization of In-flushed InAs/GaAs quantum dots emitting a broadband spectrum with multiple peaks at ~1 μm

Toshio Katsuyama, Yoshimasa Sugimoto, Nobuhiko Ozaki, 2015, Nanoscale Research Letters.

A scanning tunneling microscope using dual‐axes inchworms for the observation of a cleaved semiconductor surface

Takashi Kato, I. Tanaka, S. Ohkouchi, 1991 .

Nonlinear optical phase shift in InAs quantum dots measured by a unique two-color pump/probe ellipsometric polarization analysis

Hiroshi Ishikawa, Kiyoshi Asakawa, Hitoshi Nakamura, 2004 .

Monolithically grown multi-color InAs quantum dots as a spectral-shape-controllable near-infrared broadband light source

K. Asakawa, R. Hogg, Y. Sugimoto, 2013 .

Observation of GaAs(110) Surface by an Ultrahigh-Vacuum Atomic Force Microscope

M. Ohta, Y. Sugawara, T. Okada, 1994 .

Multi-chamber Ultrahigh Vacuum Scanning Tunneling Microscope System for Investigating Processed GaAs Surfaces and Observation of Argon-Ion-Bombarded GaAs Surfaces

Shunsuke Ohkouchi, Ichiro Tanaka, I. Tanaka, 1993 .

Scanning tunneling microscopy of GaAs-on-InP heteroepitaxial growth

I. Tanaka, S. Ohkouchi, 1992 .

Scanning tunneling microscopy observation of straight step-edge formation on highly misoriented GaAs (001) surfaces

I. Tanaka, S. Ohkouchi, N. Ikoma, 1993 .

Nanophotonics Based on Semiconductor-Photonic Crystal/Quantum Dot and Metal-/Semiconductor-Plasmonics

Kazuo Sato, Tsuyoshi Nomura, Yoshinori Watanabe, 2012, IEICE Trans. Electron..

Nanophotonics technology for advanced quantum dot/photonic crystal device and metal/semiconductor plasmonic device

T. Nomura, D. Inoue, A. Yamanaka, 2010, 2010 Photonics Global Conference.

Photonic crystal and quantum dot technologies for all-optical switch and logic device

Peter Ingo Borel, Ole Sigmund, Hiroshi Ishikawa, 2006 .

Observation of multiquantum well structure in air using a scanning tunneling microscope

Takashi Kato, I. Tanaka, S. Ohkouchi, 1990 .

Atomic resolution imaging of InP(110) surface observed with ultrahigh vacuum atomic force microscope in noncontact mode

M. Ohta, Y. Sugawara, S. Morita, 1996 .

Selective-area-growth of InAs-QDs with different absorption wavelengths via developed metal-mask/MBE method for integrated optical devices

Yoshimasa Sugimoto, Kiyoshi Asakawa, Naoki Ikeda, 2008 .

Selective area growth of InAs quantum dots with a metal mask towards optical integrated circuit devices

Yoshimasa Sugimoto, Kiyoshi Asakawa, Yusui Nakamura, 2007 .

Regular array of InGaAs quantum dots with 100-nm-periodicity formed on patterned GaAs substrates

Yoshimasa Sugimoto, Hitoshi Nakamura, K. Asakawa, 2004 .

Nano-probe-assisted technology of indium-nano-dot formation for site-controlled InAs/GaAs quantum dots

K. Asakawa, S. Ohkouchi, Y. Nakamura, 2004 .

Indium nano-dot arrays formed by field-induced deposition with a Nano-Jet Probe for site-controlled InAs/GaAs quantum dots

K. Asakawa, Hitoshi Nakamura, S. Ohkouchi, 2004 .

Rim formation on non-elongated InAs quantum dots grown by partial cap and annealing process at low temperature

Yasuhiko Arakawa, Naoto Kumagai, Satoshi Iwamoto, 2013 .

InAs quantum-dot laser utilizing GaAs photonic-crystal line-defect waveguide.

K. Asakawa, Y. Sugimoto, N. Ikeda, 2004, Optics express.