V. G. Kreismanis

发表

Photoluminescence of GaAs‐AlxGa1−xAs multiple quantum well structure under high excitations

C. Tang, Z. Xu, V. G. Kreismanis, 1983 .

Laser-photoinduced etching of semiconductors and metals

L. Eastman, G. Metze, R. Haynes, 1980 .

Orientation dependance of arsenic incorporation in metalorganic chemical‐vapor deposition‐grown HgCdTe

V. G. Kreismanis, J. Elliott, 1992 .

Stimulated emission of GaAs‐Al0.6Ga0.4As multiple quantum well structures grown by metalorganic chemical vapor deposition

C. Tang, Z. Xu, V. G. Kreismanis, 1984 .

Improved photoluminescence of organometallic vapor phase epitaxial AlGaAs using a new gettering technique on the arsine source

D. K. Wagner, J. Shealy, J. Woodall, 1983 .

High performance HgCdTe photoconductive devices grown by metalorganic chemical vapor deposition

Lindley T. Specht, Vilnis G. Kreismanis, William E. Hoke, 1986 .

Reduced metal–insulator semiconductor tunneling in metalorganic chemical vapor deposition HgCdTe(111)Te films

R. Korenstein, H. Ehsani, R. Koestner, 1992 .

Properties of P on N Heterojunctions Made with MCT Grown by MOCVD

J. Elliot, V. G. Kreismanis, R. J. Olson, 1992, Sixth International Conference Metalorganic Vapor Phase Epitaxy.

Photoluminescence measurements of Zn‐doped Ga1−xAlxAs grown by metalorganic chemical vapor deposition

C. Tang, Z. Xu, V. G. Kreismanis, 1983 .

Reactive ion etching of motheye and photonic crystal silicon nanostructures using CBrF3

G. J. Sonek, V. G. Kreismanis, G. Sonek, 2005, SPIE Optics East.

Wide‐band electro‐optical tuning of semiconductor lasers

C. Tang, J. Ballantyne, V. G. Kreismanis, 1977 .