T. Kerr

Hot carrier cooling in GaSb: Bulk and quantum wells

Leland Chang, L. L. Chang, P. A. Snow, 1989 .

Raman characterization of molecular‐beam‐epitaxy‐grown GaAlSb on GaSb and GaAs substrates

P. Kirby, T. Kerr, S. Newstead, 1989 .

The growth and characterization of nominally undoped Al1−xInxAs grown by molecular beam epitaxy

B. Wakefield, G. Davies, T. Kerr, 1984 .

A p-n-p AlGaAs heterojunction bipolar transistor for high-temperature operation

T. Kerr, M. Frost, M. Riches, 1986 .

Direct energy gap of Al1−xInxAs lattice matched to InP

D. Wood, B. Wakefield, G. Davies, 1984 .

Current transport mechanism at the emitter-base junction of an n-p-n GaAs/GaAlAs heterojunction bipolar transistor prepared by MBE

A. Rezazadeh, P. Mawby, D. Morgan, 1987, IEEE Transactions on Electron Devices.

Nonlinear excitonic optical absorption in GaSb

A. M. Fox, A. C. Maciel, J. F. Ryan, 1987 .