N. Yarykin

发表

Plasma Stimulated Impurity Redistribution in Silicon

S. Koveshnikov, V. Yunkin, E. Yakimov, 1989, 16 January.

Nickel in silicon: Room‐temperature in‐diffusion and interaction with radiation defects

J. Weber, N. Yarykin, 2017 .

Evidence for room-temperature in-diffusion of nickel into silicon

J. Weber, N. Yarykin, 2016 .

Transformation of deep-level spectrum of irradiated silicon due to hydrogenation under wet chemical etching

N. Yarykin, O. V. Feklisova, 1997 .

Electrical Activation of Interstitial Ni in Cu‐Doped Si

J. Weber, N. Yarykin, 2021, physica status solidi (a).

Nickel Interaction with Vacancy‐Type Radiation Defects in Silicon

S. Lastovskii, J. Weber, N. Yarykin, 2019, physica status solidi (RRL) – Rapid Research Letters.

DLTS Investigation of the Energy Spectrum of Si:Mg Crystals

N. Abrosimov, V. Shuman, Y. Astrov, 2019, Semiconductors.

New Results on the Electrical Activity of 3d-Transition Metal Impurities in Silicon

L. Scheffler, J. Weber, N. Yarykin, 2013 .

Hydrogen penetration into silicon during wet-chemical etching

E. Yakimov, J. Weber, N. Yarykin, 2003 .

Deep level centers in electron‐irradiated silicon crystals doped with copper at different temperatures

J. Weber, N. Yarykin, 2017 .

Interaction of copper impurity with radiation defects in silicon doped with boron

J. Weber, N. Yarykin, 2010 .

DIFFUSION OF IRON IN THE SILICON DIOXIDE LAYER OF SILICON-ON-INSULATOR STRUCTURES

G. Rozgonyi, O. Kononchuk, N. Yarykin, 1998 .

INVESTIGATION OF ELECTRICAL PROPERTY INHOMOGENEITIES FORMED BY PLASMA ETCHING

S. Koveshnikov, E. Yakimov, I. Bondarenko, 1991 .

Simulation of hydrogen penetration into p-type silicon under wet chemical etching

E. Yakimov, N. Yarykin, O. V. Feklisova, 2002 .

Interaction of hydrogen with radiation defects in p-Si crystals

E. Yakimov, J. Weber, N. Yarykin, 2001 .

Hydrogen interaction with defects in electron-irradiated silicon

J. Weber, E. Yakimov, N. Yarykin, 1999 .

Oxygen Dimers and Related Defects in Plastically Deformed Silicon

N. Yarykin, 2007 .

Electrical Properties and Defect Structure of Plastically Deformed Silicon Crystals Doped with Gold

P. Werner, V. Aristov, J. Heydenreich, 1987 .

The Cu photoluminescence defect and the early stages of Cu precipitation in Si

S. Estreicher, J. Weber, V. Kolkovsky, 2020 .

Annealing kinetics of boron-containing centers in electron-irradiated silicon

J. Weber, N. Yarykin, O. V. Feklisova, 2013 .

Room‐Temperature Ni Interaction with Deformation‐Induced Defects in Si: A DLTS Study

E. Yakimov, N. Yarykin, O. Soltanovich, 2019, physica status solidi (a).

Impact of thermal annealing on deep-level defects in strained-Si∕SiGe heterostructure

G. Rozgonyi, M. Seacrist, E. Yakimov, 2008 .

EVOLUTION OF DEEP-LEVEL CENTERS IN P-TYPE SILICON FOLLOWING ION IMPLANTATION AT 85 K

G. Rozgonyi, R. Zuhr, R. Brown, 1999 .

THE IMPACT OF IN SITU PHOTOEXCITATION ON THE FORMATION OF VACANCY-TYPE COMPLEXES IN SILICON IMPLANTED AT 85 AND 295 K

G. Rozgonyi, R. Zuhr, N. Yarykin, 1999 .

In-Situ Photoexcitation-Induced Suppression of Point Defect Generation in Ion Implanted Silicon

R. Zuhr, G. Rozgonyi, N. Yarykin, 1999 .

In Situ Deep Level Transient Spectroscopy of Defect Evolution in Silicon Following Ion Implantation at 80 K

G. Rozgonyi, R. Zuhr, R. Brown, 1998 .

Silver-hydrogen interactions in crystalline silicon

J. Weber, J.-U. Sachse, H. Lemke, 1999 .

Oxygen gettering at defects introduced by plastic deformation in silicon

V. Vdovin, N. Yarykin, E. Hieckmann, 2007 .

DLTS study of the oxygen dimer formation kinetics in silicon

J. Weber, N. Yarykin, 2009 .

Defect Generation during Plastic Deformation of Si-Rich Cz-Grown SiGe Crystals

N. Abrosimov, N. Yarykin, 2009 .

Comparative Study of Electrical and Optical Properties of Plastically Deformed Silicon

N. Yarykin, O. V. Feklisova, 2009 .

Decay of oxygen solid solution in plastically deformed silicon

V. Vdovin, N. Yarykin, 2005 .

Contribution of the disturbed dislocation slip planes to the electrical properties of plastically deformed silicon

E. Yakimov, N. Yarykin, O. V. Feklisova, 2003 .

The Electrical Activity of Dislocation Slip Planes in Semiconductor Crystals

E. Yakimov, I. Bondarenko, N. Yarykin, 1986 .

Properties and identification of the oxygen-related radiation defects in silicon

J. Weber, N. Yarykin, 2007 .

J. Weber, N. Yarykin, O. V. Feklisova, 2001 .

Hydrogenation of the dominant interstitial defect in irradiated boron-doped silicon

N. Yarykin, J. Weber, O. V. Feklisova, 2004 .

Centers with low correlation energy in deep-level transient spectroscopy studies

N. Yarykin, 2008 .

Dislocation trails in Si: Geometry and electrical properties

E. Yakimov, N. Yarykin, V. Orlov, 2017 .

Spatial Distribution of the Dislocation Trails in Silicon

E. Yakimov, N. Yarykin, V. Orlov, 2015 .

Temperature dependence of electron beam induced current contrast of deformation-induced defects in silicon

E. Yakimov, N. Yarykin, B. Pichaud, 2004 .

Comparative study of the plastic deformation- and implantation-induced centers in silicon

N. Yarykin, E. Steinman, 2003 .

Simulation of hydrogen penetration in silicon under wet chemical etching

E. Yakimov, N. Yarykin, S. Knack, 2001 .

Copper Complexes with Carbon‐Related Radiation Defects in Silicon

S. Lastovskii, J. Weber, N. Yarykin, 2021, physica status solidi (a).

Formation of the D1-center in irradiated silicon by room-temperature hydrogenation

J. Weber, N. Yarykin, 2003 .

Low temperature hydrogenation of dislocated Si

J. Weber, E. Yakimov, N. Yarykin, 1999 .

E. Sveinbjörnsson, J. Weber, J.-U. Sachse, 1999 .

A Comment to the paper by E.A. Tatokhin, A.V. Kadantsev, A.E. Bormontov, and V.G. Zadorozhniy “a statistical method of deep-level transient spectroscopy in semiconductors”

N. Yarykin, 2011 .

Metastable behavior of current-voltage characteristics in Hg1-xCdxTe p-n junctions

Eugene B. Yakimov, O. A. Soltanovich, Nikolai Yarykin, 2000, Other Conferences.

Comment on “Separation of vacancy and interstitial depth profiles in ion-implanted silicon: Experimental observation” [Appl. Phys. Lett. 78, 3442 (2001)]

N. Yarykin, 2002 .

Effect of Deep Level Athermal Recharging on DLTS Spectra in HgCdTe

E. Yakimov, N. Yarykin, O. Soltanovich, 1993 .

Electrically Active Copper–Nickel Complexes in p‐Type Silicon

Nikolai Yarykin, Jörg Weber, J. Weber, 2019, physica status solidi (a).

Spatial distribution of dislocation-related centers in plastically deformed silicon

S. Koveshnikov, E. Yakimov, N. Yarykin, 1991 .

On the nature of hydrogen-related centers in p-type irradiated silicon

J. Weber, E. Yakimov, N. Yarykin, 2001 .

Identification of copper-copper and copper-hydrogen complexes in silicon

J. Weber, N. Yarykin, 2013 .

Characterization of strained-Si/SiGe/Si heterostructures with capacitance methods

Renhua Zhang, Nikolai Yarykin, George Rozgonyi, 2006, International Conference on Micro- and Nano-Electronics.