J. Maa

发表

Observations of Sputtered Thin Film Growth

T. Hutchinson, D. Sherman, J. Maa, 1973 .

Investigation of the low-temperature AlGaN interlayer in AlGaN/GaN/AlGaN double heterostructure on Si substrate

E. Chang, Yen-Yu Chen, J. Maa, 2014 .

Plasma etching of lead germanate (PGO) ferroelectric thin film

M. Engelhard, S. Hsu, Tingkai Li, 2001 .

Growth of GaN film on 150 mm Si (111) using multilayer AlN/AlGaN buffer by metal-organic vapor phase epitaxy method

D. Tweet, S. Hsu, Tingkai Li, 2007 .

Material growth and device characterization of AlGaN/GaN single-heterostructure and AlGaN/GaN/AlGaN double-heterostructure field effect transistors on Si substrates

E. Chang, Chia-Ta Chang, J. Maa, 2014 .

A Novel GaN:C Millimeter-Wave HEMT with AlGaN Electron-Blocking Layer

C. Dee, D. Ueda, Yueh-Chin Lin, 2022, Materials.

Fabrication and characterization of a Pb5Ge3O11 one-transistor-memory device

S. Hsu, Tingkai Li, B. Ulrich, 2001 .

Effect of Graded AlxGa1-xN Interlayer Buffer on the Strain of GaN Grown on Si (111) Using MOCVD Method

D. Tweet, S. Hsu, Tingkai Li, 2008 .

Anisotropic Dry Etching of Aluminum Films Deposited on Topographic Steps

J. Maa, B. Halon, 1986 .

Strained silicon thin-film transistors fabricated on glass

D. Tweet, S. Hsu, J. Maa, 2005 .

Etch rate enhancement of silicon in CF4‐O2 plasmas

J. Maa, L. White, 1985 .

Characterization and reduction of twist in Ge on insulator produced by localized liquid phase epitaxy

D. Tweet, S. Hsu, J. Maa, 2005 .

Effect of V/III ratios on surface morphology in a GaSb thin film grown on GaAs substrate by MOCVD

T. Minh, S. Chang, E. Chang, 2014, 2014 IEEE International Conference on Semiconductor Electronics (ICSE2014).

Selective deposition of TiSi2 on ultra-thin silicon-on-insulator (SOI) wafers

S. Hsu, G. Stecker, B. Ulrich, 1998 .

Elimination of the 16O2+ effect in backscattering studies of thin film reactions

J. Maa, Yuen‐chung Liu, C. Chou, 1977 .

Backscattering analysis of the successive layer structures of titanium silicides

Chien-jung Lin, J. Maa, Yuen‐chung Liu, 1979 .

2H-silicon carbide epitaxial growth on c-plane sapphire substrate using an AlN buffer layer and effects of surface pre-treatments

E. Chang, Tingru Wei, B. Tran, 2015, Electronic Materials Letters.

Backscattering analysis of impurities in the ion beams

J. Maa, Yuen‐chung Liu, W. Hsu, 1978 .

Phosphorus out diffusion from double‐layered tantalum silicide/polycrystalline silicon structure

C. Magee, J. Maa, J. O'Neill, 1983 .

X-Ray Techniques for Silicides

D. Tweet, S. Hsu, J. Maa, 2001 .

Performance improvement of highly mismatched GaSb layers on GaAs by interfacial-treatment-assisted chemical vapor deposition

Sheng-Po Chang, E. Chang, Y. Wong, 2016, Journal of Materials Science: Materials in Electronics.

Low resistance copper-based ohmic contact for AlGaN/GaN high electron mobility transistors

C. Dee, E. Chang, Y. Wong, 2013 .

Effect of interlayer on thermal stability of nickel silicide

Douglas J. Tweet, Jer-shen Maa, Sheng Teng Hsu, 2001 .

Stability Improvement of Nickel Silicide with Co Interlayer on Si, Polysilicon and SiGe

D. Tweet, S. Hsu, L. Stecker, 2001 .

PGO spin-coating precursor synthesis

S. Hsu, W. Zhuang, J. Maa, 2001 .

Effect of Argon Ion Bombardment on the Stability of Narrow Cobalt Silicide/Polysilicon Structure

J. Maa, C. Peng, 1996 .

Early growth of thin films deposited by ion‐beam sputtering

T. Hutchinson, J. Maa, 1977 .

Reflectivity reduction by oxygen plasma treatment of capped metallization layer

P. Zanzucchi, D. Meyerhofer, J. Maa, 1989 .

Dislocation reduction in GaN film using Ga-lean GaN buffer layer and migration enhanced epitaxy

M. Hudait, Yueh-Chin Lin, E. Chang, 2011 .

Mobility enhancement of SSOI devices fabricated with sacrificial thin relaxed SiGe

J.J. Lee, S.T. Hsu, J.S. Maa, 2004, 2004 IEEE International SOI Conference (IEEE Cat. No.04CH37573).

Relaxation of SiGe Films for the Fabrication of Strained Si Devices

T. Ueda, D. Tweet, S. Hsu, 2003 .

Relaxation of Strained SiGe on Insulator by Direct Wafer Bonding

D. Tweet, S. Hsu, J. Maa, 2004 .

Surface passivation by adding fluorocarbons and chlorofluorocarbons into an Al dry etch reactor

J. Maa, 1987 .

Studies of Ir–Ta–O as High Temperature Stable Electrode Material and Its Application for Ferroelectric SrBi2Ta2O9 Thin Film Deposition

S. Hsu, S. Ohnishi, J. Maa, 1999 .

Highly Stable Ir-Ta-O Electrode for Ferroelectric Material Deposition

S. Hsu, W. Zhuang, S. Ohnishi, 2000 .

Effect of temperature on etch rate of iridium and platinum in CF4/O2

Hong Ying, Jer-shen Maa, Fengyan Zhang, 2001 .

Effect of post‐etch treatment on chlorine concentration of AlSi and Ti‐capped AlSi films

R. J. Paff, J. Maa, H. Gossenberger, 1990 .

Study of Thick Copper Metallization with WNx as Diffusion Barrier for AlGaN/GaN HEMTs

Y. Lin, H. Hsu, E. Chang, 2019, 2019 14th European Microwave Integrated Circuits Conference (EuMIC).