S. Stenin

发表

Silicon homoepitaxy with ion sputtering. I. Mechanism of growth

O. Pchelyakov, R. N. Lovyagin, E. A. Krivorotov, 1973 .

Heteroepitaxy of germanium thin films on silicon by ion sputtering

O. Pchelyakov, R. N. Lovyagin, L. Aleksandrov, 1974 .

Change in water vapour adsorption kinetics in chemically vapour deposited SiO2 films after ion irradiation

A. G. Noskov, S. Stenin, G. M. Tseytlin, 1988 .

Initial Stage of Plastic Deformation of Substrates in Heterostructures

S. Stenin, E. Trukhanov, 1981, July 16.

The initial stages of NiSi2 epitaxy on clean Si(111), Si(100) and Si(110) surfaces

T. Gavrilova, S. Stenin, A. Dolbak, 1991 .

Structural inhomogeneities in gallium arsenide epitaxial layers

V. Astakhov, V. M. Zaletin, S. Stenin, 1976 .

Molecular beam epitaxy of semiconductor, dielectric and metal films

S. Stenin, 1986 .

General Criteria for Dislocation Structures in Heteroepitaxial Films

S. Stenin, 1987 .

Processes of defect formation in epitaxial semiconductor films

S. Stenin, 1984 .

Equilibrium dislocation configurations in heterostructures

S. Stenin, E. Trukhanov, 1981 .

The plastic deformation kinetics for heteroepitaxial films during the misfit dislocation generation from the growth surface

A. Gutakovskii, S. Stenin, 1981 .

Molecular Beam Epitaxy of Semiconductor, Metal, and Dielectric Films

A. Toropov, S. Stenin, 1991 .

Investigations of MBE-Grown Superlattices with Sb Delta-Layers in Silicon by Rutherford Backscattering Spectrometry

V. Popov, A. Nikiforov, S. Stenin, 1990 .

Effect of nickel on clean silicon surfaces: Transport and structure

T. Gavrilova, S. Stenin, A. Dolbak, 1989 .

Residual defects in implanted layers on silicon after high-temperature annealing

S. Stenin, N. Gerasimenko, V. Kalinin, 1978 .

Specific features of the dislocation structure of germanium in the system germanium–pyrolitic silica film

S. Stenin, E. Trukhanov, E. Gorokhov, 1976 .

Dislocation processes during plastic deformation of Si and Ge in the range 0.50 to 0.95 of the melting temperature

S. Stenin, A. Aseev, Y. Golobokov, 1975 .

X-ray double crystal topographic measurements of distorted crystals

S. Stenin, Yu. G. Sidorov, P. A. Botev, 1989 .

Dislocation interactions in germanium covered with dielectric films

A. G. Noskov, S. Stenin, E. Trukhanov, 1979 .

Dislocations and stresses in a crystal with an island film

A. G. Noskov, S. Stenin, E. Trukhanov, 1979 .

Structure of SiO2 Pyrolitic Films on Ge Substrates

O. Pchelyakov, L. Sokolov, S. Stenin, 1977, October 16.

Investigation of germanium films and GeSi interface structure by transmission electron microscopy

N. N. Soldatenko, Y. Tkhorik, S. Stenin, 1975 .

Study of the growth mechanism of modulated structures in the InAsGaAs system

A. K. Gutakovsky, S. Rubanov, M. A. Revenko, 1988 .

Molecular-Beam Epitaxy of Silicon

A. Nikiforov, S. Stenin, B. Kanter, 1992 .

Silicon homoepitaxy with ion sputtering. II. Formation of defects

O. Pchelyakov, R. N. Lovyagin, A. Toropov, 1973 .

Transformations on clean Si(111) stepped surface during sublimation

A. Latyshev, S. Stenin, A. Aseev, 1989 .

Auger analysis of a GaAs (111) a surface after its contact with the InGaAsP saturated liquid

S. Stenin, Y. Bolkhovityanov, B. Z. Ol’shanetskiĭ, 1984 .

Reflection electron microscopy study of structural transformations on a clean silicon surface in sublimation, phase transition and homoepitaxy

A. Latyshev, S. Stenin, A. Aseev, 1990 .

Reflection electron microscopy study of clean Si(111) surface reconstruction during the (7 × 7) ⇔ (1 × 1) phase transition

A. Latyshev, L. Sokolov, S. Stenin, 1991 .

Morphological transformations of thin heteroepitaxial films

A. Toropov, S. Stenin, S. Pintus, 1987 .

The Formation of Partial Misfit Dislocations during Heteroepitaxy

A. Gutakovskii, B. Zakharov, S. Stenin, 1981, September 16.

Problems of the Formation of Dislocation Structures in Heteroepitaxial Layers

S. Stenin, 1979, October 16.

Micromorphology and defects of non‐doped gallium arsenide layers

V. Astakhov, V. M. Zaletin, A. Toropov, 1978 .

On the origin of superstructures observed on surfaces of Ge and GexSi1−x films grown on Si(111)(7 × 7)

O. Pchelyakov, L. Sokolov, A. Toropov, 1989 .

Initial stages of silicon homoepitaxy studied by in situ reflection electron microscopy

A. Latyshev, S. Stenin, A. Aseev, 1989 .

Monoatomic step clustering during superstructural transitions on Si(111) surface

A. Latyshev, S. Stenin, A. Krasilnikov, 1992 .

Structural Reconstruction of Atomically-Clean Silicon Surface during Sublimation and Epitaxy

A. Latyshev, S. Stenin, A. Aseev, 1992 .

Sb periodic doping in low-temperature Si-MBE

A. Nikiforov, S. Stenin, B. Kanter, 1991 .

Twinning in CdTe(111) films on GaAs (100) substrates

I. Sabinina, S. Dvoretskii, A. Gutakovskii, 1989 .

Formation and Motion of Dislocations in the Crystallization Process of Selenium from the Amorphous Phase

S. Stenin, A. Aseev, O. Vasin, 1972, March 16.

Influence of crystallization conditions on formation of dislocation structure of germanium homoepitaxial layers produced by gas‐transport technique

V. P. Migal’, S. Stenin, Yu. D. Vaulin, 1973 .

Formation of dislocation structure in silicon layers on non‐orienting substrates

A. G. Klimenko, S. Meyer, S. Stenin, 1975 .

HREM of epitaxial layers in the InAs/GaAs system

A. K. Gutakovsky, E. Orlova, S. Rubanov, 1991 .

Correlation between stress and structure in chemically vapour deposited silicon nitride films

A. G. Noskov, E. B. Gorokhov, G. A. Sokolova, 1988 .

Molecular beam epitaxy with synchronization of nucleation

O. Pchelyakov, V. Markov, L. Sokolov, 1991 .

The Effect of Implantation Temperature on the Mechanism of Misfit Dislocation Formation

S. Stenin, N. Gerasimenko, V. Kalinin, 1978, February 16.

Effect of buffer layers on the dislocation structure of heteroepitaxial systems

A. K. Gutakovsky, S. Stenin, Y. Bolkhovityanov, 1981 .

Influence of the method of preparation on the structure and properties of Ge-GaAs heterojunctions

S. Stenin, V. Shumsky, A. Aseev, 1976 .