J. Liday

发表

R.F. sputtered silicon films on sapphire

O. Vaněk, V. Tvarozek, R. Harman, 1976 .

Contribution to the Quantitative Analysis of Ternary Alloys of Group III-Nitrides by Auger Spectroscopy

T. Baumann, J. Liday, J. Breza, 2010 .

AES of semi-insulating polycrystalline silicon layers

J. Liday, J. Breza, S. Tomek, 1996 .

Quantitative Auger electron analysis of homogeneous binary alloys of Cr, Fe and Ni

S. Hofmann, R. Harman, J. Liday, 1992 .

Auger electron spectroscopy composition depth profiling of Cr/Ni multilayer structures using Ar+ and Xe+ ions

A. Zalar, G. Badin, R. Harman, 1992 .

Epitaxial LSMO films grown on GaAs substrates with MgO buffer layer

I. Vávra, J. P. Espinós, P. Lobotka, 2009 .

A computer controlled chemical bevel etching apparatus: applications to Auger analysis of multi-layered structures

M. El-Gomati, J. Kováč, R. Srnánek, 1999 .

Chemical bevelling of CdTe and CdTe/MnTe structures

H. Sitter, I. Novotný, R. Srnánek, 1998 .

Auger electron spectroscopy investigation of sputter induced altered layers in SiC by low energy sputter depth profiling and factor analysis

O. Ambacher, G. Ecke, J. Liday, 2003 .

Distribution of fluorine in YBCO thin films prepared by BaF2 technique

C. Creemers, M. Jergel, F. Hanic, 1994 .

The role of vacuum isothermal annealing in synthesis of YBa/sub 2/Cu/sub 3/O/sub 7-x/ thin films

M. Jergel, F. Hanic, Š. Chromík, 1993, IEEE Transactions on Applied Superconductivity.

High Tc Y‐Ba‐Cu‐O thin films prepared by in situ low‐temperature codeposition of Y, BaF2, and Cu on α‐Al2O3 substrates

R. Adam, M. Jergel, F. Hanic, 1990 .

COMMUNICATIONS OHMIC CONTACTS TO p-GaN BASED ON THE SINGLE-WALLED CARBON NANOTUBES

J. Liday, 2013 .

Investigation of NiOx-based contacts on p-GaN

I. Vávra, G. Ecke, H. Sitter, 2008 .

Auger electron spectroscopy of Au/NiOx contacts on p-GaN annealed in N2 and O2 + N2 ambients

I. Vávra, G. Ecke, H. Sitter, 2007 .

AUGER DEPTH PROFILING AND FACTOR ANALYSIS OF SPUTTER INDUCED ALTERED LAYERS IN SiC

O. Ambacher, G. Ecke, J. Liday, 2003 .

Properties of amorphous silicon carbide films prepared by PECVD

J. Huran, L. Hrubčín, J. Liday, 1996 .

Quantitative Auger electron spectroscopy of SiC

O. Ambacher, G. Ecke, J. Liday, 2006 .

ANALYSIS OF NANOSTRUCTURES BY MEANS OF AUGER ELECTRON SPECTROSCOPY

O. Ambacher, V. Cimalla, G. Ecke, 2007 .

Spray deposited Tl-Ba-Ca-Cu-O films and bulks subjected to a common anneal

G. Plesch, M. Jergel, F. Hanic, 1994 .

Characterisation of titanium disilicide thin films

Alexander Satka, Daniel Donoval, Marián Veselý, 2006, Microelectron. J..

The distribution of elements in sequentially prepared MgB2 on SiC buffered Si substrate and possible pinning mechanisms

J. P. Espinós, Š. Chromík, J. Liday, 2013 .

Use of the Peak‐to‐background Ratio for Quantitative Auger Analysis of Semi‐insulating Polycrystalline Silicon Layers

J. Liday, J. Breza, P. Vogrinčič, 1996 .

The innovation facilities of Auger spectrometer with energy modulation on CMA

J. Liday, P. Vogrinčič, S. Tomek, 1994 .

Stable fluoride based sputtering target for Tl-based cuprate superconducting thin film fabrication

E. Dobročka, M. Sojková, V. Štrbík, 2015 .

Significant increasing of onset temperature of FM transition in LSMO thin films

E. Dobročka, M. Reiffers, V. Štrbík, 2013 .

Diffusion Studies in Fe-Co-B Metallic Glasses

E. Majková, S. Luby, V. Boháč, 1992 .

Preparation and structural properties of MgO films grown on GaAs substrate

I. Vávra, P. Lobotka, Š. Chromík, 2008 .

Structural Evolution of Sputtered Indium Oxide Thin Films

Mária Čaplovičová, Dalibor Búc, Jozef Liday, 2010 .

Preparation and structural properties of YBCO films grown on GaN/c-sapphire hexagonal substrate

I. Vávra, J. P. Espinós, T. Lalinsky, 2010 .

The layers of carbon nanomaterials as the base of ohmic contacts to p-GaN

I. Vávra, I. Hotovy, M. Kotlár, 2014 .

Improving the Ohmic Properties of Au/Ni–Mg/P–GaN Contacts by Adding Swcnt Metallization Interlayer Between Metal and P–GaN Layers

Peter Vogrinčič, Marián Marton, Jozef Liday, 2013 .

Ohmic Contacts to P–GaN Based on the Single–Walled Carbon Nanotubes

Peter Vogrinčič, Marián Marton, Jozef Liday, 2013 .

Improving the ohmic properties of contacts to P–GaN by adding p–type dopants into the metallization layer

Juraj Breza, Jozef Liday, Peter Vogrinčič, 2012 .

Ohmic contacts to p-GaN Using Au/Ni-Mg-O Metallization

Juraj Breza, Alberta Bonanni, Peter Vogrinčič, 2010 .

The effect of the semiconductor surface treatment on LB film/Si interface

E. Pinčík, J. Liday, P. Tomčík, 1995 .

Some Aspects of Quantitative Analysis of Ternary Alloys of Group III-Nitrides by Auger Electron Spectroscopy

Jozef Liday, Peter Vogrinčič, Gernod Ecke, 2011 .

III-As heterostructure field-effect transistors with recessed ex-situ gate oxide by O2 plasma-oxidized GaAs cap

D. Gregušová, R. Kúdela, F. Gucmann, 2015 .

1.9 Depth chemical profiles of MNOS structures measured by AES

M. Veselý, R. Harman, J. Liday, 1977 .

Nb-Ti/Al/Ni/Au based ohmic contacts to AlGaN/GaN

G. Vanko, I. Kostic, T. Lalinsky, 2007 .

FERMI LEVEL ANALYSIS OF GROUP III NITRIDE SEMICONDUCTOR DEVICE STRUCTURES BY AUGER PEAK POSITION MEASUREMENTS

O. Ambacher, J. Pezoldt, G. Ecke, 2006 .