Sangjoon Park

Growth of two-dimensional Janus MoSSe by a single in situ process without initial or follow-up treatments

Sung Kim, S. Choi, Chan Wook Jang, 2022, NPG Asia Materials.

Si‐core/SiGe‐shell channel nanowire FET for sub‐10‐nm logic technology in the THz regime

Seongjae Cho, Jongwan Jung, Won-Jun Lee, 2019, ETRI Journal.

Gas-phase etching mechanism of silicon oxide by a mixture of hydrogen fluoride and ammonium fluoride: A density functional theory study

Seongjae Cho, Jongwan Jung, Won-Jun Lee, 2023, Journal of Vacuum Science & Technology A.

Selective etching mechanism of silicon oxide against silicon by hydrogen fluoride: a density functional theory study.

T. R. Mayangsari, Sangjoon Park, Romel Hidayat, 2023, Physical chemistry chemical physics : PCCP.

Corrigendum to “Density functional theory study on the modification of silicon nitride surface by fluorine-containing molecules” [Appl. Surf. Sci. 554 (2021) 149481]

Seongjae Cho, Jongwan Jung, Won-Jun Lee, 2022, Applied Surface Science.

Process Steps for High Quality Si-Based Epitaxial Growth at Low Temperature via RPCVD

Seongjae Cho, Jongwan Jung, Won-Jun Lee, 2021, Materials.