Jiwon Chang

发表

Tunnelling-based ternary metal–oxide–semiconductor technology

K. Kim, Y. E. Choi, Kyuho Lee, 2019, Nature Electronics.

Scaling and Variation Predictions for Silicon Fin-Based High Electron Mobility Transistor

Jong Yul Park, Sung-Ho Kim, Kyung Rok Kim, 2020, IEEE Electron Device Letters.

Design of p‐WSe2/n‐Ge Heterojunctions for High‐Speed Broadband Photodetectors

G. Yoo, H. Kum, J. Heo, 2021, Advanced Functional Materials.

A 2D material-based floating gate device with linear synaptic weight update.

J. Y. Kwak, Suyoun Lee, Minkyung Kim, 2020, Nanoscale.

Theoretical Analysis of Ballistic Current Transport in Monolayer Black Arsenic MOSFETs

Jiwon Chang, J. E. Seo, Dongwook Seo, 2020, IEEE Transactions on Electron Devices.

Theoretical study of phosphorene tunneling field effect transistors

C. Hobbs, Jiwon Chang, 2015, 1502.04223.

Topological insulator Bi2Se3 thin films as an alternative channel material in MOSFETs

L. Register, S. Banerjee, Jiwon Chang, 2012, 1211.4595.

Ballistic performance comparison of monolayer transition metal dichalcogenide MX2 (M = Mo, W; X = S, Se, Te) metal-oxide- semiconductor field effect transistors

L. Register, S. Banerjee, Jiwon Chang, 2014, 1402.3309.

Analytical models of single and double gate JFETs for low power applications

Jiwon Chang, 2009 .

Demonstration of PdSe2 CMOS Using Same Metal Contact in PdSe2 n‐/p‐MOSFETs through Thickness‐Dependent Phase Transition

J. Y. Kwak, T. Das, E. Park, 2022, Advanced Electronic Materials.

Substitutional doping of metal contact for monolayer transition metal dichalcogenides: A density functional theory based study

S. Banerjee, A. Valsaraj, L. F. Register, 2015, 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

Atomistic quantum transport simulation of topological insulator Bi2Se3 tunnel FETs

L. Register, Jiwon Chang, Sanjay K. Banerje, 2012 .

Density functional study of ternary topological insulator thin films

L. Register, S. Banerjee, B. Sahu, 2011, 1104.5204.

Thin Film Electronic Properties of Ternary Topological Insulator

L. Register, S. Banerjee, B. Sahu, 2012 .

Enhanced Piezoelectric Output Performance of the SnS2/SnS Heterostructure Thin-Film Piezoelectric Nanogenerator Realized by Atomic Layer Deposition.

H. Chang, J. Nah, Sol Lee, 2021, ACS nano.

Theoretical Evaluation of Two-Dimensional Ferroelectric Material CuInP2S6 for Ferroelectric Tunnel Junction Device

Kyung Rok Kim, Jiwon Chang, Eunyeong Yang, 2021, IEEE Electron Device Letters.

Doping-Free All PtSe2 Transistor via Thickness-Modulated Phase Transition.

J. Y. Kwak, T. Das, Minkyung Kim, 2021, ACS applied materials & interfaces.

Topological insulator Bi2Se3 thin films as an alternative channel material in metal-oxide-semiconductor field-effect transistors

L. Register, Jiwon Chang, 2017 .

Gate‐Controlled Rectifying Direction in PdSe2 Lateral Heterojunction Diode

J. Y. Kwak, T. Das, Jiwon Chang, 2021, Advanced Electronic Materials.

Atomistic simulation of the electronic states of adatoms in monolayer MoS2

S. Banerjee, S. Larentis, L. F. Register, 2013, 1305.7162.

Air Stable Doping and Intrinsic Mobility Enhancement in Monolayer Molybdenum Disulfide by Amorphous Titanium Suboxide Encapsulation.

Amritesh Rai, Anupam Roy, Emanuel Tutuc, 2015, Nano letters.

Tunable Current Transport in PdSe2 via Layer‐by‐Layer Thickness Modulation by Mild Plasma

T. Das, Jiwon Chang, J. E. Seo, 2020, Advanced Electronic Materials.

Novel antimonene tunneling field-effect transistors using an abrupt transition from semiconductor to metal in monolayer and multilayer antimonene heterostructures.

Jiwon Chang, 2018, Nanoscale.

Comparison of ballistic transport characteristics of monolayer transition metal dichalcogenides (TMDs) MX2 (M = Mo, W; X = S, Se, Te) n-MOSFETs

L. Register, S. Banerjee, Jiwon Chang, 2013, 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

Atomistic full-band simulations of monolayer MoS2 transistors

L. Register, S. Banerjee, Jiwon Chang, 2013, 1304.2990.

Modeling of anisotropic two-dimensional materials monolayer HfS2 and phosphorene metal-oxide semiconductor field effect transistors

Jiwon Chang, 2015 .

Atomistic Tight-Binding Study of Contact Resistivity in Si/SiGe PMOS Schottky Contacts

C. Weber, Gerhard Klimeck, M. Povolotskyi, 2018, IEEE Transactions on Nanotechnology.

Visible and infrared dual-band imaging via Ge/MoS2 van der Waals heterostructure

G. Yoo, J. Heo, Youngseo Park, 2021, Science advances.

Theoretical and experimental investigation of vacancy-based doping of monolayer MoS2 on oxide

S. Banerjee, A. Valsaraj, L. F. Register, 2014, 1412.7852.

Polarity Control and Weak Fermi-Level Pinning in PdSe2 Transistors.

J. Y. Kwak, T. Das, E. Park, 2021, ACS applied materials & interfaces.

Doping-Free Arsenene Heterostructure Metal-Oxide-Semiconductor Field Effect Transistors Enabled by Thickness Modulated Semiconductor to Metal Transition in Arsenene

Jiwon Chang, Dongwook Seo, 2019, Scientific Reports.

Intrinsic limit of contact resistance in the lateral heterostructure of metallic and semiconducting PtSe2.

Jiwon Chang, Eunyeong Yang, J. E. Seo, 2020, Nanoscale.

Analytical Model of Short-Channel Double-Gate JFETs

Sanjay K Banerjee, Jiwon Chang, Ashok K Kapoor, 2010, IEEE Transactions on Electron Devices.

Computational Analysis of Metal Contact on Bi2O2Se with Se Surface Vacancies

Jiwon Chang, S. Youn, 2023, Advanced Electronic Materials.

Simulation of channel orientation dependent transport in ultra-scaled monolayer MoX2 (X = S, Se, Te) n-MOSFETs

Jiwon Chang, 2015 .

Theoretical investigation of monolayer MoS$_2$ on oxide

S. Banerjee, A. Valsaraj, L. F. Register, 2014 .