S. Yi

Extremely high mobility ultra-thin metal-oxide with ns2np2 configuration

A. Chin, Chun-Fu Lu, C. Shih, 2015, 2015 IEEE International Electron Devices Meeting (IEDM).

High Performance Metal-Gate/High- ${\kappa } $ GaN MOSFET With Good Reliability for Both Logic and Power Applications

Xiaoyan Liu, A. Chin, S. Di, 2016, IEEE Journal of the Electron Devices Society.

Improved Electrical Characteristics of ~0.5 nm EOT Ge pMOSFET With GeON Interfacial Layer Formed by NH3 Plasma and Microwave Annealing Treatments

K. Chang-Liao, Chia-Wei Hsu, S. Yi, 2018, IEEE Electron Device Letters.

Low Equivalent Oxide Thickness and Leakage Current of pGe MOS Device by Removing Low Oxidation State in GeOx With H2 Plasma Treatment

K. Chang-Liao, D. Ruan, S. Yi, 2020, IEEE Electron Device Letters.

Highly Selective Chemical Etching of Si vs. Si1 − x Ge x Using NH 4 OH Solution

Jianlin Liu, Youdou Zheng, Jianlin Liu, 1997 .

High Performance Ge pMOSFETs With HfO2/Hf-Cap/GeOx Gate Stack and Suitable Post Metal Annealing Treatments

K. Chang-Liao, Chia-Wei Hsu, S. Yi, 2017, IEEE Electron Device Letters.

Ultra-low power green electronic devices

A. Chin, S. Yi, 2015, 2015 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC).

Notable difference between rapid-thermal and microwave annealing on Ge pMOSFETs

K. Chang-Liao, D. Ruan, Chia-Wei Hsu, 2021 .