T. Aull

Half-Metal–Spin-Gapless-Semiconductor Junctions as a Route to the Ideal Diode

S. Blügel, I. Mertig, E. Şaşıoğlu, 2020, Physical Review Applied.

Ab Initio Study of Magnetic Tunnel Junctions Based on Half-Metallic and Spin-Gapless Semiconducting Heusler Compounds: Reconfigurable Diode and Inverse Tunnel-Magnetoresistance Effect

I. Mertig, N. F. Hinsche, E. Şaşıoğlu, 2022, Physical Review Applied.

Ab initio design of quaternary Heusler compounds for reconfigurable magnetic tunnel diodes and transistors

S. Ostanin, I. Mertig, A. Ernst, 2019, Physical Review Materials.

Large-Scale Benchmark of Exchange–Correlation Functionals for the Determination of Electronic Band Gaps of Solids

Ahmad W. Huran, F. Tran, M. Marques, 2019, Journal of chemical theory and computation.

Ab initio study of magnetic tunnel junctions based on half-metallic and spin-gapless semiconducting Heusler compounds: Reconfigurable diode and inverse TMR effect for magnetic memory and logic applications

I. Mertig, E. Şaşıoğlu, T. Aull, 2022 .