W. Y. Leong

发表

Radiative recombination channels due to hydrogen in crystalline silicon

P. W. Smith, L. Canham, M. Houlton, 1989 .

Electrical and Optical Properties of Si and Si 1−x Ge x , Alloy Grown by the Ultra-High Vacuum Vapour Phase Epitaxy Method

J. L. Glasper, L. T. Canham, W. Y. Leong, 1991 .

Enhancement of the infrared detection efficiency of silicon photon-counting avalanche photodiodes by use of silicon germanium absorbing layers.

J. Rarity, G. Buller, P. Hiskett, 2002, Optics letters.

Potential‐Enhanced Doping of Si Grown by Molecular Beam Epitaxy

E. Parker, R. Kubiak, W. Y. Leong, 1985 .

Spectroscopic ellipsometry of epitaxial Si {100} surfaces

C. Pickering, D. Robbins, A. Pidduck, 1992 .

Spectroscopic ellipsometry characterization of strained and relaxed Si1-xGex epitaxial layers

C. Pickering, D. Robbins, S. Barnett, 1993 .

Spectroscopic ellipsometry of Si1−xGex epilayers of arbitrary composition 0≤x≤0.255

C. Pickering, D. Robbins, W. Y. Leong, 1994 .

Non-destructive characterisation of doped Si and SiGe epilayers using FTIR spectroscopic ellipsometry (FTIR-SE)

C. Pickering, J. Glasper, J. Piel, 2002 .

Anomalous DLTS signals due to small fluctuations in the reverse bias voltage on a Si diode

D. Robbins, W. Y. Leong, 1989 .

Spectroscopic ellipsometry of Si1-xGex multi-quantum wells

C. Pickering, D. Robbins, S. Barnett, 1993 .