J. A. Gardella

Interface characterization of atomic layer deposited Al2O3 on m‐plane GaN

J. S. Wallace, Elena Echeverria, U. Singisetti, 2017 .

Band Offset Characterization of the Atomic Layer Deposited Aluminum Oxide on m-Plane Indium Nitride

J. S. Wallace, A. Dabiran, U. Singisetti, 2016, Journal of Electronic Materials.

Time-of-flight secondary ion mass spectrometry depth profiling of multiple quantum well II–VI semiconductors using negative cluster ions

T. D. Wood, J. A. Gardella, Jiaxing Chen, 1999 .

Composition of uranium oxide particles related to TOF‐SIMS ion distributions

L. Burggraf, X. Duan, Wesley A. Schuler, 2013 .

Study of MnAs as a Spin Injector for GaAs-Based Semiconductor Heterostructures

H. Luo, E. Fraser, A. Petrou, 2012 .

Ga2O3 MOSFETs Using Spin-On-Glass Source/Drain Doping Technology

J. S. Wallace, U. Singisetti, K. Sasaki, 2017, IEEE Electron Device Letters.

Structural, band and electrical characterization of β-(Al0.19Ga0.81)2O3 films grown by molecular beam epitaxy on Sn doped β-Ga2O3 substrate

J. S. Wallace, U. Singisetti, A. Goyal, 2019, Journal of Applied Physics.

Spectroscopic and electrical calculation of band alignment between atomic layer deposited SiO2 and β-Ga2O3 ( 2¯01)

J. S. Wallace, U. Singisetti, Ke Zeng, 2015 .