H. Yoshida

发表

Optical properties of InGaN/GaN MQW LEDs grown on Si (111) substrates with low threading dislocation densities

S. Nunoue, K. Uesugi, Jumpei Tajima, 2014, Photonics West - Optoelectronic Materials and Devices.

Performance enhancement of blue light-emitting diodes with InGaN/GaN multi-quantum wells grown on Si substrates by inserting thin AlGaN interlayers

S. Nunoue, Aoi Okada, K. Uesugi, 2016 .

Mechanism of Luminescence Enhancement in Ca4YO ( BO3 ) 3 : Eu3 + by Gd Substitution under Vacuum Ultraviolet Light Excitation

Hajime Yamamoto, K. Ogasawara, K. Uheda, 2008 .

Impact of dislocations and defects on the relaxation behavior of InGaN/GaN multiple quantum wells grown on Si and sapphire substrates

S. Nunoue, T. Hikosaka, Hajime Nago, 2015 .

First‐principles calculation of magnetic circular dichroism of transition‐metal L2,3‐edge X‐ray absorption near‐edge structures

K. Ogasawara, A. Chaya, H. Yoshida, 2009 .

Synthesis and photoluminescence of Ca–(Sn,Ti)–Si–O compounds

S. Abe, H. Yamane, H. Yoshida, 2010 .

Introduction of molecules containing a NO2 group on diamond surface by using radical reaction in liquid phase

Toshiki Tsubota, K. Kusakabe, T. Ohno, 2006 .

Lifetime distribution of PL under pulsed excitation in hydrogenated amorphous silicon based films

H. Yoshida, H. Takemura, K. Morigaki, 2000 .

Transfer of Excitation Energy from Pr3+ to Gd3+ in YF3:Pr3+,Gd3+

S. Sakuragi, S. Hashimoto, N. Ohno, 2007 .

Luminescence properties of YAl3(BO3)4:Gd3+ phosphors substituted with Sc3+ ions

K. Ogasawara, H. Yoshida, Ryo Yoshimatsu, 2007 .

Optical Transitions near the Fundamental Absorption Edge and Electronic Structures of YAl3(BO3)4:Gd3+

Shinta Watanabe, K. Ogasawara, H. Yoshida, 2006 .

First-principles calculations of 4f–5d optical absorption spectra in BaMgAl10O17:Eu

Shinta Watanabe, K. Ogasawara, H. Yoshida, 2007 .

Intensity Enhancement of Auger-Free Luminescence in BaF 2 and CsCl by Acceleration Voltage of Electron-Beam Excitation

M. Itoh, H. Yoshida, M. Hayashi, 2000 .

LED manufacturing issues concerning gallium nitride-on-silicon (GaN-on-Si) technology and wafer scale up challenges

N. Sugiyama, S. Nunoue, T. Shioda, 2013, 2013 IEEE International Electron Devices Meeting.

Auger-free luminescence in mixed alkali halides

M. Itoh, S. Hashimoto, M. Kamada, 1996 .

Atomic-layer-resolved bandgap structure of an ultrathin oxynitride-silicon film epitaxially grown on 6H-SiC (0001)

Satoru Tanaka, Y. Tamenori, T. Shirasawa, 2009 .

Enhanced light output power of green LEDs employing AlGaN interlayer in InGaN/GaN MQW structure on sapphire (0001) substrate

Koichi Tachibana, Hisashi Yoshida, Shinya Nunoue, 2012 .

High-crystalline-quality AlN grown on SiC substrates by controlling growth mode

S. Kimura, H. Yoshida, 2020 .

Reduction of threading dislocation by recoating GaN island surface with SiN for high-efficiency GaN-on-Si-based LED

N. Sugiyama, S. Nunoue, T. Hikosaka, 2014 .

Red fluorescent material and white light emitting diodes using red fluorescent material

H. Yoshida, R. Yoshimatsu, 2004 .

Surface cleaning on aluminum for ultrahigh vacuum using supercritical fluid CO2 with H2O and NaCl as additives

Y. Ikushima, T. Momose, T. Ebina, 1999 .

Polarity-dependent emission and conversion characteristics of GaN-based thermionic cathodes

H. Miyazaki, A. Ogino, S. Kimura, 2020, 2020 33rd International Vacuum Nanoelectronics Conference (IVNC).

Thermionic emission and conversion properties of n-type AlGaN thin film cathodes grown on 6H–SiC substrates

A. Ogino, S. Uchida, S. Kimura, 2020, Japanese Journal of Applied Physics.

Experimental and Theoretical Investigations for Excitation Properties of Ba1-x Eu x MgAl10O17

Hajime Yamamoto, Shinta Watanabe, K. Ogasawara, 2007 .

P‐202L: Late‐News Poster: Luminescence and Excitation Properties of Host Lattice and Eu2+ Ions in BaMgAl10O17:Eu2+ Phosphor

Hajime Yamamoto, Shinta Watanabe, K. Ogasawara, 2007 .