A. Mizerov

发表

Influence of a por-Si Buffer Layer on the Optical Properties of Epitaxial InxGa1 –xN/Si(111) Heterostructures with a Nanocolumnar Film Morphology

E. Nikitina, H. Leiste, I. Arsentyev, 2019, Semiconductors.

Features of the spatial distribution of indium in InGaN epitaxial layers grown by plasma-assisted molecular beam epitaxy

S. Ivanov, A. Sitnikova, V. Jmerik, 2008 .

InGaN-based epilayers and quantum wells with intense room-temperature photoluminescence in the 500–650 nm range

M. Koike, P. Kop’ev, S. Ivanov, 2007 .

Optically pumped lasing at 300.4 nm in AlGaN MQW structures grown by plasma‐assisted molecular beam epitaxy on c‐Al2O3

G. P. Yablonskii, B. Monemar, S. Ivanov, 2010 .

Electrical properties of Mg‐doped GaN and AlxGa1–xN

N. M. Shmidt, S. Ivanov, B. Ber, 2009 .

Solar-blind UV photocathodes based on AlGaN heterostructures with a 300- to 330-nm spectral sensitivity threshold

A. N. Alekseev, S. I. Petrov, S. Ivanov, 2012 .

Plasma assisted molecular beam epitaxy of thin GaN films on Si(111) and SiC/Si(111) substrates: Effect of SiC and polarity issues

A. V. Osipov, S. Kukushkin, A. Mizerov, 2018 .

RHEED monitoring of elastic stresses during MBE growth of group III nitride heterostructures

S. Ivanov, V. Jmerik, D. Nechaev, 2012 .

Features of molecular beam epitaxy of the GaN (0001) and GaN (000$$ \bar 1 $$) layers with the use of different methods of activation of nitrogen

S. Ivanov, V. Jmerik, V. K. Kaibyshev, 2009 .

Metal-Assisted Photochemical Etching of N- and Ga-Polar GaN Epitaxial Layers

E. Nikitina, K. Shubina, T. N. Berezovskaya, 2019 .

Processing of GaN/Si(111) Epitaxial Structures for MEMS Applications

E. Nikitina, I. Morozov, K. Shubina, 2018, Semiconductors.

Effect of the transition porous silicon layer on the properties of hybrid GaN/SiC/por-Si/Si(1 1 1) heterostructures

H. Leiste, P. Seredin, A. Lenshin, 2020 .

Influence of a Nanoporous Silicon Layer on the Practical Implementation and Specific Features of the Epitaxial Growth of GaN Layers on SiC/por-Si/c-Si Templates

H. Leiste, S. Kukushkin, I. Arsentyev, 2020, Semiconductors.

Structural, optical and morphological properties of hybrid heterostructures on the basis of GaN grown on compliant substrate por-Si(111)

H. Leiste, M. Rinke, P. Seredin, 2019, Applied Surface Science.

Novel approach for III-N on Si (111) templates fabrication by low-temperature PA MBE using porous Si layer

P. Seredin, D. Goloshchapov, D. Zolotukhin, 2017 .

Effect of SiC buffer layer on GaN growth on Si via PA-MBE

A. V. Osipov, S. Kukushkin, A. Mizerov, 2017 .

Investigation into the Influence of a Buffer Layer of Nanoporous Silicon on the Atomic and Electronic Structure and Optical Properties of AIIIN/por-Si Heterostructures Grown by Plasma-Activated Molecular-Beam Epitaxy

I. Arsentyev, P. Seredin, D. Goloshchapov, 2019, Semiconductors.

S2-semipolar GaN grown by HVPE on a non-polar m-plane sapphire: Features of growth and structural, morphological, and optical properties

A. Nashchekin, M. Sobolev, E. Pirogov, 2022, Optical Materials.

Controlling active nitrogen flux in plasma-assisted molecular beam epitaxy of group III nitrides

S. Ivanov, V. Jmerik, T. Shubina, 2007 .

AlGaN-based quantum-well heterostructures for deep ultraviolet light-emitting diodes grown by submonolayer discrete plasma-assisted molecular-beam epitaxy

G. P. Yablonskii, P. Kop’ev, A. Sakharov, 2008 .

Control over the morphology of AlN during molecular beam epitaxy with the plasma activation of nitrogen on Si (111) substrates

E. Nikitina, A. Egorov, A. Mizerov, 2015 .

Growth of thick AlN epilayers with droplet-free and atomically smooth surface by plasma-assisted molecular beam epitaxy using laser reflectometry monitoring

P. Kop’ev, S. Troshkov, S. Ivanov, 2012 .

AlGaN quantum well structures for deep-UV LEDs grown by plasma-assisted MBE using sub-monolayer digital-alloying technique

V. Yu. Davydov, G. P. Yablonskii, A. A. Sitnikova, 2009 .

Electrical properties and optical absorption in InN:In structures

A. Semenov, V. Jmerik, T. Shubina, 2008 .

Observation of the influence of complex SiC porous buffer layer on properties of GaN/Si(111) heterostructures

P. Seredin, D. Goloshchapov, D. Zolotukhin, 2020, Journal of Physics: Conference Series.

Optical Properties of GaN/SiC/por-Si/Si(111) Hybrid Heterostructures

E. Nikitina, S. Kukushkin, P. Seredin, 2020, Semiconductors.

Quantum-confined stark effect and localization of charge carriers in Al0.3Ga0.7N/Al0.4Ga0.6N quantum wells with different morphologies

A. Toropov, A. Sitnikova, V. Jmerik, 2012 .

Method for Controlling the Polarity of Gallium Nitride Layers in Epitaxial Synthesis of GaN/AlN Heterostructures on Hybrid SiC/Si Substrates

S. Kukushkin, K. Shubina, T. N. Berezovskaya, 2019, Physics of the Solid State.

Effect of Pretreatment of the Silicon Substrate on the Properties of GaN Films Grown by Chloride–Hydride Vapor-Phase Epitaxy

A. Lebedev, T. Prutskij, P. Seredin, 2021, Semiconductors.

Role of strain in growth kinetics of AlGaN layers during plasma-assisted molecular beam epitaxy

S. I. Troshkov, M. A. Yagovkina, P. Kop’ev, 2011 .

Low-threshold 303 nm lasing in AlGaN-based multiple-quantum well structures with an asymmetric waveguide grown by plasma-assisted molecular beam epitaxy on c-sapphire

G. P. Yablonskii, A. A. Sitnikova, S. Ivanov, 2010 .

Growth of GaN Layers on Si(111) Substrates by Plasma-Assisted Molecular Beam Epitaxy

M. Sobolev, A. Mizerov, E. A. Nikitina, 2018 .

Photoelectric Properties of GaN Layers Grown by Plasma-Assisted Molecular-Beam Epitaxy on Si(111) Substrates and SiC/Si(111) Epitaxial Layers

E. Nikitina, M. Sobolev, S. Kukushkin, 2019, Semiconductors.

MicroRaman Study of Nanostructured Ultra-Thin AlGaN/GaN Thin Films Grown on Hybrid Compliant SiC/Por-Si Substrates

Alias Radam, P. Seredin, D. Goloshchapov, 2022, Coatings.

Structural and Morphological Properties of Hybrid Heterostructures Based on GaN Grown on a Compliant por-Si(111) Substrate

H. Leiste, I. Arsentyev, M. Rinke, 2019, Semiconductors.

Effect of a por-Si Buffer Layer on the Structure and Morphology of Epitaxial InxGa1 – xN/Si(111) Heterostructures

H. Leiste, I. Arsentyev, M. Rinke, 2018, Semiconductors.

Inhomogeneous InGaN and InN with In-enriched Nanostructures

J. Leymarie, A. Vasson, B. Monemar, 2007 .

Photoemission Studies of the Electronic Structure of GaN Grown by Plasma Assisted Molecular Beam Epitaxy

S. Kukushkin, G. Benemanskaya, A. Mizerov, 2019, Physics of the Solid State.

Electronic structure and optical characteristics of the hybrid GaN/por-Si heterostructures

H. Leiste, I. Arsentyev, M. Rinke, 2019, Journal of Physics: Conference Series.