K. Hussain

发表

Excimer laser liftoff of AlGaN/GaN HEMTs on thick AlN heat spreaders

G. Simin, M. Chandrashekhar, Asif Khan, 2021, Applied Physics Letters.

Bulk-like intrinsic phonon thermal conductivity of micrometer thick AlN films.

Abdullah Al Mamun, M. Khan, M. Goorsky, 2020, ACS applied materials & interfaces.

Impact of Mode-Hopping Noise on InGaN Edge Emitting Laser Relative Intensity Noise Properties

N. Grandjean, P. Besnard, R. Butté, 2018, IEEE Journal of Quantum Electronics.

High-current recessed gate enhancement-mode ultrawide bandgap Al x Ga1−x N channel MOSHFET with drain current 0.48 A mm−1 and threshold voltage +3.6 V

Abdullah Al Mamun, G. Simin, M. Chandrashekhar, 2021 .

Ultrawide bandgap AlxGa1–xN channel heterostructure field transistors with drain currents exceeding 1.3 A mm−1

G. Simin, M. Chandrashekhar, Asif Khan, 2020, Applied Physics Express.

Doped Barrier Al0.65Ga0.35N/Al0.40Ga0.60N MOSHFET With SiO2 Gate-Insulator and Zr-Based Ohmic Contacts

G. Simin, Xuhong Hu, Asif Khan, 2018, IEEE Electron Device Letters.

Reflective vertical cavity semiconductor saturable absorber for functional operations with thermal limitations and saturable index change

P. Datta, K. Hussain, R. Pradhan, 2011 .

Dual colour cw mode-locking through soft aperture based on second order cascaded nonlinearity.

S. Mondal, P. Datta, S. P. Singh, 2013, Optics express.

Photonics integrated circuits using AlxGa1−xN based UVC light-emitting diodes, photodetectors and waveguides

G. Simin, M. Chandrashekhar, Asif Khan, 2020, Applied Physics Express.

A comparative study on dual colour soft aperture cascaded second-order mode-locking with different nonlinear optical crystals

S. Mondal, P. Datta, S. P. Singh, 2014 .

Acousto-Optic-Modulator-Stabilized, Low Threshold Nonlinear Mirror Mode-locked Laser

P. Datta, K. Hussain, A. Ray, 2007, 2007 Conference on Lasers and Electro-Optics - Pacific Rim.

An Initial Study of Ultraviolet C Optical Losses for Monolithically Integrated AlGaN Heterojunction Optoelectronic Devices

G. Simin, M. Chandrashekhar, Asif Khan, 2020, physica status solidi (a).

Enhanced Amplitude Noise Tolerance of a Self-Seeded RSOA Laser Using Balanced Detection

R. Brenot, L. Bramerie, J. Simon, 2017, IEEE Photonics Technology Letters.

Effect of including intraband phenomena in the semiconductor optical amplifier model for propagation of short pulses.

P. Datta, K. Hussain, 2013, Applied optics.

Development of Optical Parametric Oscillator Tunable in the Range 970-1460 nm

S. Mondal, P. Datta, K. Hussain, 2011 .

Photoconductive Thin Films Composed of Environmentally Benign AgBiS2 Nanocrystal Inks Obtained through a Rapid Phase Transfer Process

A. Greytak, M. Chandrashekhar, H. Loye, 2021 .

Trap characterization in ultra-wide bandgap Al0.65Ga0.4N/Al0.4Ga0.6N MOSHFET's with ZrO2 gate dielectric using optical response and cathodoluminescence

G. Simin, V. Wheeler, C. Eddy, 2019 .

An opto-thermal study of high brightness 280 nm emission AlGaN micropixel light-emitting diode arrays

G. Simin, M. Chandrashekhar, Asif Khan, 2020, Applied Physics Express.

Nonlinear optical properties of some newly developed crystals for measurement of ultrafast laser pulses

P. Kumbhakar, K. Hussain, 2006 .

Efficient depolarization-loss-compensation of solid state lasers using only a Glan-Taylor polarizer

S. Mondal, P. Datta, B. N. Upadhyay, 2013 .

High In-Plane Thermal Conductivity of Aluminum Nitride Thin Films.

M. Goorsky, Zeyu Liu, T. Luo, 2021, ACS nano.

Temperature characteristics of high-current UWBG enhancement and depletion mode AlGaN-channel MOSHFETs

G. Simin, M. Chandrashekhar, Asif Khan, 2020 .

All-optical 2R regeneration with contrast enhancement in a reflective vertical cavity quantum-wells saturable absorber

P. Datta, S. Saha, K. Hussain, 2013, IEEE/OSA Journal of Optical Communications and Networking.

High‐Current‐Density Enhancement‐Mode Ultrawide‐Bandgap AlGaN Channel Metal–Insulator–Semiconductor Heterojunction Field‐Effect Transistors with a Threshold Voltage of 5 V

S. Rajan, W. Lu, Asif Khan, 2021, physica status solidi (RRL) – Rapid Research Letters.

Al0.65Ga0.35N/Al0.4Ga0.6N Micro-Channel Heterojunction Field Effect Transistors With Current Density Over 900 mA/mm

S. Rajan, W. Lu, Asif Khan, 2020, IEEE Electron Device Letters.

Enhanced light extraction efficiency of micropixel geometry AlGaN DUV light-emitting diodes

G. Simin, M. Chandrashekhar, Asif Khan, 2021, Applied Physics Express.

Growth evolution of high-quality MOCVD aluminum nitride using nitrogen as carrier gas on the sapphire substrate

Asif Khan, M. Gaevski, I. Ahmad, 2021, Journal of Materials Research.

BaTiO3/Al0.58Ga0.42N lateral heterojunction diodes with breakdown field exceeding 8 MV/cm

S. Rajan, W. Lu, Asif Khan, 2020 .

Ultra-wide bandgap AlGaN metal oxide semiconductor heterostructure field effect transistors with high-k ALD ZrO2 dielectric

G. Simin, Xuhong Hu, V. Wheeler, 2019, Semiconductor Science and Technology.

Supporting Information: High In-Plane Thermal Conductivity of Aluminum Nitride Thin Films

Abdullah Al Mamun, M. Goorsky, Zeyu Liu, 2021 .

High‐Temperature Operation of AlxGa1−xN (x > 0.4) Channel Metal Oxide Semiconductor Heterostructure Field Effect Transistors with High‐k Atomic Layer Deposited Gate Oxides

G. Simin, V. Wheeler, C. Eddy, 2020, physica status solidi (a).

Current collapse in high-Al channel AlGaN HFETs

G. Simin, Xuhong Hu, Asif Khan, 2019, Applied Physics Express.

High figure of merit extreme bandgap Al0.87Ga0.13N-Al0.64Ga0.36N heterostructures over bulk AlN substrates

Abdullah Al Mamun, G. Simin, M. Goorsky, 2023, Applied Physics Express.

Thermoreflectance Imaging of (Ultra)wide Band-Gap Devices with MoS2 Enhancement Coatings.

M. Hersam, R. Hanus, S. Graham, 2021, ACS applied materials & interfaces.

Spatially resolved Fourier transform impedance spectroscopy: A technique to rapidly characterize interfaces, applied to a QD/SiC heterojunction

G. Simin, A. Greytak, Asif Khan, 2021 .