J. Hsieh

发表

Defect depth profiling using photoluminescence and cathodoluminescence spectroscopy : the role of oxygen on reactive ion beam etching of GaN in O2/Ar plasmas

H. Hwang, H. Schweizer, J. M. Hwang, 2001 .

Reduction of etching damage in the fabrication of quantum wires

H. Hwang, J. Hsieh, H. W. Yang, 1994 .

A damage-reduced process revealed by photoluminescence in photoelectrochemical etching GaN

H. Hwang, W. Hung, J. Hsieh, 2000 .

Damage-free photo-assisted cryogenic etching of GaN as evidenced by reduction of yellow luminescence

H. Hwang, W. Hung, J. Hsieh, 1999 .

Photoelectrochemical etching of InxGa1−xN

H. Hwang, W. Hung, J. Hwang, 2000 .

Surface etching of InP(100) by chlorine

H. Hwang, W. Hung, J. Hsieh, 1998 .

AES and SRUPS studies on surface passivation of GaAs by (NH4)2Sx sulfurization techniques

H. Hwang, J. Hsieh, 1996 .

Adsorption and Decomposition of H2S on InP(100)

H. Hwang, W. Hung, J. Hsieh, 1999 .