Z. Miao

发表

Micro-Raman investigation of strain in GaN and AlxGa1−xN/GaN heterostructures grown on Si(111)

Peng Chen, Soo Jin Chua, Z. L. Miao, 2002 .

Optical properties of InAs∕GaAs surface quantum dots

S. Chua, S. Tripathy, P. Chen, 2005 .

Influence of the polarization on interfacial properties in Al/SiO2/GaN/Al0.4Ga0.6N/GaN heterojunction metal–insulator–semiconductor structures

D. Chi, Youliao Zheng, S. Chua, 2003 .

Modification of GaAs/AlGaAs asymmetrically coupled double quantum well characteristics by proton implantation induced intermixing

Mengke Li, P. Liu, W. Lu, 2001 .

Growth of InAs quantum dots on shallow spherically shaped craters prepared on GaAs (0 0 1) substrates: an extended set of vicinal surfaces

S. Chua, Yuebing Zheng, Z. Miao, 2004 .

Photoluminescence of InGaN/GaN multiple quantum wells originating from complete phase separation

S. Chua, Peng Chen, Z. Miao, 2003 .

Enhanced photoluminescence of InAs self-assembled quantum dots grown by molecular-beam epitaxy using a “nucleation-augmented” method

C. Chia, S. Chua, Z. Miao, 2004 .

Erratum: “Micro-Raman investigation of strain in GaN and AlxGa1−xN/GaN heterostructures grown on Si(111)” [J. Appl. Phys. 92, 3503 (2002)]

S. Chua, S. Tripathy, Peng Chen, 2003 .

Study on the confined states in single surface quantum wells

Wendong Xu, W. Lu, Peng Chen, 2000 .

Growth and structural properties of thick InAs films on GaAs with low-pressure metalorganic vapor phase epitaxy

S. Chua, Z. Miao, Hairong Yuan, 2004 .

High-quality InAs grown on GaAs substrate with an in situ micro-structured buffer

S. Chua, P. Chen, S. K. Tripathy, 2004 .

Selective growth of GaAs quantum dots on the triangle nanocavities bounded by SiO2 mask on Si substrate by MBE

Yuebing Zheng, Soo Jin Chua, Z. L. Miao, 2004 .

Transition of 3D to 2D growth modes of InAs grown on GaAs

S. Chua, S. Tripathy, Z. Miao, 2006 .