K. Lekhal

发表

Internal quantum efficiency in yellow-amber light emitting AlGaN-InGaN-GaN heterostructures

Bernard Gil, Benjamin Damilano, Pierre Valvin, 2015 .

Internal quantum efficiency and Auger recombination in green, yellow and red InGaN-based light emitters grown along the polar direction

B. Damilano, B. Gil, T. Ngo, 2017 .

Metal Organic Vapor Phase Epitaxy of Monolithic Two-Color Light-Emitting Diodes Using an InGaN-Based Light Converter

J. Brault, J. Massies, B. Damilano, 2013 .

Effect of V/III ratio on the surface morphology and electrical properties of m –plane (101¯0) GaN homoepitaxial layers

H. Amano, S. Bae, S. Nitta, 2017 .

Controlled morphology of regular GaN microrod arrays by selective area growth with HVPE

H. Amano, A. Tamura, Ho‐Jun Lee, 2016 .

Selective-area growth of GaN microrods on strain-induced templates by hydride vapor phase epitaxy

H. Amano, A. Tamura, Ho‐Jun Lee, 2016 .

Capping green emitting (Ga,In)N quantum wells with (Al,Ga)N: impact on structural and optical properties

B. Damilano, P. Vennégués, P. de Mierry, 2014 .

The universal photoluminescence behaviour of yellow light emitting (Ga,In)N/GaN heterostructures

B. Damilano, T. Bretagnon, P. Valvin, 2014 .

Reconfiguration of Amorphous Complex Oxides: A Route to a Broad Range of Assembly Phenomena, Hybrid Materials, and Novel Functionalities.

D. Savage, I. Szlufarska, C. Deneke, 2021, Small.

Highly elongated vertical GaN nanorod arrays on Si substrates with an AlN seed layer by pulsed-mode metal–organic vapor deposition

Jeong Yong Lee, H. Amano, S. Bae, 2016 .

Exceptional Crystal-Defined Bunched and Hyperbunched GaN Nanorods Grown by Catalyst-Free HVPE

E. Gil, Y. André, A. Trassoudaine, 2012 .

NC-AFM Study of the Adsorption of Hexamethoxytriphenylene on KBr(001)

A. Gourdon, G. Aivazian, S. Gauthier, 2011 .

Demonstration of crystal–vapor equilibrium leading to growth blockade of GaN during selective area growth

E. Gil, Y. André, A. Trassoudaine, 2012 .

Orientation-controlled epitaxial lateral overgrowth of semipolar GaN on Si(001) with a directionally sputtered AlN buffer layer

H. Amano, A. Tamura, Ho‐Jun Lee, 2017 .

Catalyst-assisted hydride vapor phase epitaxy of GaN nanowires: exceptional length and constant rod-like shape capability

C. Bougerol, G. Monier, E. Gil, 2012, Nanotechnology.

Highly tin doped GaAs at low growth temperatures using tetraethyl tin by metal organic vapor phase epitaxy

T. Kuech, Y. Guan, O. Elleuch, 2019, Journal of Crystal Growth.

Ultralong and defect-free GaN nanowires grown by the HVPE process.

C. Bougerol, J. Leymarie, G. Monier, 2014, Nano letters.

Auger effect in yellow light emitters based on InGaN–AlGaN–GaN quantum wells

B. Damilano, P. Valvin, B. Gil, 2016 .

Hydride VPE: the unexpected process for the fast growth of GaAs and GaN nanowires with record aspect ratio and polytypism-free crystalline structure

Christelle Varenne, François Réveret, Dominique Castelluci, 2013, Smart Materials, Nano-, and Micro- Smart Systems.

III-nitride core–shell nanorod array on quartz substrates

Yoshio Honda, Ho-Jun Lee, Young-Dahl Jho, 2017, Scientific Reports.

Record pure zincblende phase in GaAs nanowires down to 5 nm in radius.

V. Dubrovskii, J. Harmand, F. Glas, 2014, Nano letters.

Selective‐area growth of doped GaN nanorods by pulsed‐mode MOCVD: Effect of Si and Mg dopants

H. Amano, Ho‐Jun Lee, S. Bae, 2017 .

Vapor liquid solid-hydride vapor phase epitaxy (VLS-HVPE) growth of ultra-long defect-free GaAs nanowires: ab initio simulations supporting center nucleation.

P. Hoggan, A. Rowe, G. Monier, 2014, The Journal of chemical physics.

Optimized In composition and quantum well thickness for yellow-emitting (Ga,In)N/GaN multiple quantum wells

J. Chauveau, B. Damilano, P. Vennégués, 2016 .

Strain-compensated (Ga,In)N/(Al,Ga)N/GaN multiple quantum wells for improved yellow/amber light emission

B. Damilano, B. Gil, P. Vennégués, 2015 .

Selective-area growth of vertically oriented GaN nanostructures with a hafnium pre-orienting layer

Yoshio Honda, Ho-Jun Lee, Hiroshi Amano, 2017 .