G. Nataf

发表

ORDERED GAN/INGAN NANORODS ARRAYS GROWN BY MOLECULAR BEAM EPITAXY FOR PHOSPHOR-FREE WHITE LIGHT EMISSION

P. Lefebvre, J. Zúñiga-Pérez, E. Luna, 2012 .

Comparison between Polar (0001) and Semipolar (11\bar22) Nitride Blue–Green Light-Emitting Diodes Grown onc- andm-Plane Sapphire Substrates

S. Chenot, P. Mierry, M. Nemoz, 2009 .

Demonstration of semipolar (11-22) InGaN/ GaN blue-green light emitting diode

S. Chenot, M. Nemoz, G. Nataf, 2008 .

Lateral overgrowth of high quality GaN layers on GaN/Al2O3 patterned substrates by halide vapour-phase epitaxy

S. Haffouz, M. Vaille, B. Beaumont, 1998 .

Improved semipolar (112¯2) GaN quality using asymmetric lateral epitaxy

P. Mierry, M. Nemoz, G. Nataf, 2009 .

High quality ELO-GaN layers on GaN/Al2O3 patterned substrates by halide vapour phase epitaxy

P. Vennégués, S. Haffouz, M. Vaille, 1999 .

Lateral overgrowth of GaN on patterned GaN/sapphire substrate via selective metal organic vapour phase epitaxy: a route to produce self supported GaN substrates

S. Haffouz, M. Vaille, B. Beaumont, 1998 .

TEMPERATURE QUENCHING OF PHOTOLUMINESCENCE INTENSITIES IN UNDOPED AND DOPED GAN

Pierre Gibart, Bernard Beaumont, Nicolas Grandjean, 1999 .

Filtering of Defects in Semipolar (11−22) GaN Using 2-Steps Lateral Epitaxial Overgrowth

P. Vennégués, P. de Mierry, M. Leroux, 2010, Nanoscale research letters.

Stacking faults blocking process in (1 1 −2 2) semipolar GaN growth on sapphire using asymmetric lateral epitaxy

P. Vennégués, P. Mierry, M. Nemoz, 2010 .

Efficient blocking of planar defects by prismatic stacking faults in semipolar (112¯2)-GaN layers on m-sapphire by epitaxial lateral overgrowth

P. Ruterana, B. Lacroix, P. Mierry, 2011 .

Growth of freestanding GaN using pillar-epitaxial lateral overgrowth from GaN nanocolumns

J. Ristić, E. Calleja, A. Trampert, 2007 .

Selective growth of GaAs and Al0.35Ga0.65As on GaAs patterned substrates by HCl assisted low pressure metalorganic vapour phase epitaxy

M. Leroux, P. Gibart, G. Nataf, 1996 .

Growth and characterization of polar (0 0 0 1) and semipolar (1 1 −2 2) InGaN/GaN quantum dots

E. Monroy, P. Komninou, A. Das, 2011 .

Selective area growth of a- and c-plane GaN nanocolumns by molecular beam epitaxy using colloidal nanolithography

J. Zúñiga-Pérez, M. Sánchez-García, E. Calleja, 2012 .

A InP Lattice-Matched Ga0.47.In0.53As Cell for Multispectral Photovoltaics

P. Garabedian, B. Beaumont, J. Guillaume, 1987 .

Low temperature photoluminescence of n‐type GaInAsP layers grown on InP by liquid phase epitaxy

B. Beaumont, J. Guillaume, C. Vérié, 1983 .

Systematic study of near-infrared intersubband absorption of polar and semipolar GaN/AlN quantum wells

F. Julien, E. Monroy, P. Ruterana, 2013 .

Epitaxial lift-off in photovoltaics:ultra thin Al/sub 0.2/Ga/sub 0.8/As cell in a mechanically stacked (Al,Ga)As/Si tandem

Pierre Gibart, Bernard Beaumont, Mathieu Leroux, 1994, Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC).

Defect structure in heteroepitaxial semipolar () (Ga, Al)N

E. Monroy, P. Ruterana, Y. Arroyo Rojas Dasilva, 2010, Journal of physics. Condensed matter : an Institute of Physics journal.

Semipolar GaN films on patterned r-plane sapphire obtained by wet chemical etching

Sébastien Chenot, S. Chenot, P. Mierry, 2010 .

Growth of high quality crack-free AlGaN films on GaN templates using plastic relaxation through buried cracks

Fabrice Semond, E. Feltin, Franck Natali, 2003 .

Mg-enhanced lateral overgrowth of GaN on patterned GaN/sapphire substrate by selective Metal Organic Vapor Phase Epitaxy

S. Haffouz, Pierre Gibart, Bernard Beaumont, 1998 .

Epitaxial growth of InAs1−xSbx alloys by MOCVD

C. Vérié, G. Nataf, 1981 .

Modeling Study of Hydride Vapor Phase Epitaxy of GaN

Y. Makarov, S. Karpov, M. Heuken, 1999 .