S. Bui

Single-gate accumulation-mode InGaAs quantum dot with a vertically integrated charge sensor

R. S. Ross, M. Gyure, A. Hunter, 2009, 0910.3631.

Metamorphic InAsyP1−y (y=0.30–0.75) and AlδIn1−δAsyP1−y buffer layers on InP substrates

H. P. Lee, K. Yu, S. Bui, 2007 .

Room-temperature InAlAs∕InGaAs∕InP planar resonant tunneling-coupled transistor

J. Moon, D. Chow, D. Wong, 2005 .

Lifetime measurements (T1) of electron spins in Si/SiGe quantum dots

R. S. Ross, J. Moon, M. Gyure, 2009, 0908.0173.

Magnetically enhanced etching of sub‐0.5 μm polysilicon gates

E. Ghanbari, J. Sasserath, S. Bui, 1992 .

Gate-tunable high mobility remote-doped InSb/In1−xAlxSb quantum well heterostructures

M. Manfra, C. Marcus, M. Gyure, 2015, 1503.06710.