I. Vitomirov

发表

Planar MEMS RF capacitor integration

S. Cunningham, A. Morris, D. Dereus, 2011, 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference.

Processing and reconstruction effects on Al-GaAs(100) barrier heights

J. Woodall, P. Kirchner, L. Brillson, 1993 .

Process-Dependent Electronic Structure at Metallized GaAs Contacts

R. E. Viturro, J. Woodall, P. Kirchner, 1992 .

Impact of surface processing on Al/GaAs(100) interface states

J. Woodall, P. Kirchner, L. Brillson, 1992 .

Abruptness of Au‐Si contacts with thin CoSi2 interlayers

C. Aldao, F. Xu, J. H. Weaver, 1987 .

High-energy auger and medium-energy backscattered electron diffraction as a probe of ultra-thin epitaxial overlayers, sandwiches and superlattices

J. H. Weaver, S. Chambers, I. Vitomirov, 1987 .

Temperature‐dependent chemical and electronic structure of reconstructed GaAs (100) surfaces

A. Finnefrock, J. Woodall, P. Kirchner, 1992 .

Increased range of Fermi‐level stabilization energy at metal/melt‐grown GaAs(100) interfaces

J. Woodall, P. Kirchner, L. Brillson, 1991 .

Photoelectron attenuation lengths and thermal broadening in GaAs(110)

M. Schabel, J. H. Weaver, G. D. Waddill, 1991 .

Photoemission and inverse photoemission studies of La adatom interactions with YBa2Cu3O6.9

Yongli Gao, C. Aldao, J. H. Weaver, 1988 .

Temperature‐dependent interface morphology and Schottky barrier evolution for Au/InP(110)

Yongli Gao, C. Aldao, J. H. Weaver, 1989 .

Interface formation by atom and cluster deposition: Novel electronic and structural properties

C. Aldao, J. H. Weaver, G. D. Waddill, 1989 .

Interface growth with atoms and preformed clusters: Morphology and Schottky barrier variations for Au/InP(110)

C. Aldao, J. H. Weaver, G. D. Waddill, 1988 .

Cluster-Assembled Interfaces

C. Aldao, J. H. Weaver, I. Vitomirov, 1993 .

Electronic structure of metal/semiconductor interfaces from cathodoluminescence and soft X-ray photoemission spectroscopies

J. Woodall, P. Kirchner, L. Brillson, 1993 .

A 20–350 K variable‐temperature sample holder with sample interchangeability

C. Aldao, J. H. Weaver, G. D. Waddill, 1990 .

Chemical and electronic properties of Al/[vicinal GaAs(100)] and Au/[vicinal GaAs(100)] interfaces

J. Woodall, C. Mailhiot, P. Kirchner, 1992 .

Simultaneous epitaxy and substrate out-diffusion at a metal-semiconductor interface: Fe/GaAs(001)-c(8 x 2).

Chen, Weaver, Chambers, 1986, Physical review. B, Condensed matter.