J. Camirand Lemyre

Miniaturizing neural networks for charge state autotuning in quantum dots

R. Melko, D. Drouin, M. Pioro-Ladrière, 2021, Mach. Learn. Sci. Technol..

Algorithm for automated tuning of a quantum dot into the single-electron regime

D. Lachance-Quirion, M. Pioro-Ladrière, S. Rochette, 2019, 1911.11651.

Operation of a silicon quantum processor unit cell above one kelvin

K. Itoh, C. Yang, J. C. Hwang, 2020, Nature.

Telegraphic noise in transport through colloidal quantum dots.

D. Lachance-Quirion, C. Allen, M. Pioro-Ladrière, 2014, Nano letters.

Operation of a silicon quantum processor unit cell above one kelvin

K. Itoh, C. Yang, J. C. Hwang, 2019, Nature.

Bell-state tomography in a silicon many-electron artificial molecule

K. Itoh, A. Laucht, F. Hudson, 2020, Nature Communications.

Cryogenic Temperature Characterization of a 28-nm FD-SOI Dedicated Structure for Advanced CMOS and Quantum Technologies Co-Integration

F. Arnaud, D. Drouin, P. Lemieux, 2018, IEEE Journal of the Electron Devices Society.

Understanding conditions for the single electron regime in 28 nm FD-SOI quantum dots: Interpretation of experimental data with 3D quantum TCAD simulations

M. Pioro-Ladrière, P. Galy, S. Rochette, 2023, Solid-State Electronics.

Nanofabrication of gate-defined GaAs/AlGaAs lateral quantum dots.

M. Pioro-Ladrière, J. Camirand Lemyre, C. Bureau-Oxton, 2013, Journal of visualized experiments : JoVE.