G. Avit

发表

Influence of Silicon on the Nucleation Rate of GaAs Nanowires on Silicon Substrates

C. Bougerol, V. Dubrovskii, C. Robert-Goumet, 2018, The Journal of Physical Chemistry C.

Compositional control of homogeneous InGaN nanowires with the In content up to 90%

H. Amano, C. Bougerol, V. Dubrovskii, 2018, Nanotechnology.

Circumventing the miscibility gap in InGaN nanowires emitting from blue to red

C. Bougerol, V. Dubrovskii, J. Leymarie, 2018, Nanotechnology.

Formation of voids in selective area growth of InN nanorods in SiNx on GaN templates

C. Bougerol, V. Dubrovskii, P. Ferret, 2020, Nano Futures.

Selective growth of ordered hexagonal InN nanorods

T. Taliercio, T. Cornelius, C. Bougerol, 2019, CrystEngComm.

GaN Rods Grown on Si by SAG-HVPE toward GaN HVPE/InGaN MOVPE Core/Shell Structures

C. Bougerol, B. Gayral, A. Dussaigne, 2016 .

Exceptional Crystal-Defined Bunched and Hyperbunched GaN Nanorods Grown by Catalyst-Free HVPE

E. Gil, Y. André, A. Trassoudaine, 2012 .

Catalyst-assisted hydride vapor phase epitaxy of GaN nanowires: exceptional length and constant rod-like shape capability

C. Bougerol, G. Monier, E. Gil, 2012, Nanotechnology.

Ultralong and defect-free GaN nanowires grown by the HVPE process.

C. Bougerol, J. Leymarie, G. Monier, 2014, Nano letters.

Hydride VPE: the unexpected process for the fast growth of GaAs and GaN nanowires with record aspect ratio and polytypism-free crystalline structure

Christelle Varenne, François Réveret, Dominique Castelluci, 2013, Smart Materials, Nano-, and Micro- Smart Systems.

Limitation of simple np-n tunnel junction based LEDs grown by metal-organic vapor phase epitaxy

M. Pristovsek, Y. André, A. Trassoudaine, 2020, Semiconductor Science and Technology.

Understanding indium incorporation of InGaN grown on polar, semi-polar, and non-polar orientation by metal–organic vapor phase epitaxy

H. Amano, M. Pristovsek, Y. Honda, 2022, Applied Physics Letters.

Record pure zincblende phase in GaAs nanowires down to 5 nm in radius.

V. Dubrovskii, J. Harmand, F. Glas, 2014, Nano letters.

Crystal engineering by tuning the growth kinetics of GaN 3-D microstructures in SAG-HVPE

H. Amano, S. Bae, E. Gil, 2018 .

Selective Area Growth of GaAs Nanowires and Microplatelet Arrays on Silicon by Hydride Vapor-Phase Epitaxy

K. Moselund, H. Schmid, R. LaPierre, 2023, Crystal Growth & Design.

Strain-induced yellow to blue emission tailoring of axial InGaN/GaN quantum wells in GaN nanorods synthesized by nanoimprint lithography

H. Amano, M. Pristovsek, Y. Robin, 2021, Scientific Reports.

Vapor liquid solid-hydride vapor phase epitaxy (VLS-HVPE) growth of ultra-long defect-free GaAs nanowires: ab initio simulations supporting center nucleation.

P. Hoggan, A. Rowe, G. Monier, 2014, The Journal of chemical physics.

Importance of As and Ga Balance in Achieving Long GaAs Nanowires by Selective Area Epitaxy

H. Schmid, R. LaPierre, C. Bougerol, 2023, Crystal Growth & Design.