N. Mollard

发表

Improvement of the critical temperature of NbTiN films on III-nitride substrates

V. Zwiller, E. Monroy, C. Bougerol, 2018, Superconductor Science and Technology.

Assessment of AlGaN/AlN superlattices on GaN nanowires as active region of electron-pumped ultraviolet sources

E. Monroy, S. Purcell, C. Bougerol, 2019, Nanotechnology.

UV-emission from GaN wires with m-plane core-shell GaN/AlGaN multiple quantum wells.

J. Eymery, E. Monroy, C. Bougerol, 2020, ACS applied materials & interfaces.

Composition Analysis of III-Nitrides at the Nanometer Scale: Comparison of Energy Dispersive X-ray Spectroscopy and Atom Probe Tomography

E. Monroy, P. Jouneau, C. Bougerol, 2016, Nanoscale Research Letters.

Elaboration of microporous CeO2 thin layers having nanocrystallites network controlled by Pluronic P123: Impact of key experimental parameters

D. Rébiscoul, Zijie Lu, J. Causse, 2019, Journal of Sol-Gel Science and Technology.

Structure evolution of mesoporous silica under heavy ion irradiations of intermediate energies

S. Dourdain, Y. Serruys, X. Deschanels, 2017 .

Epitaxial electrical contact to graphene on SiC

H. Okuno, S. Pouget, G. Lapertot, 2017, 1705.08257.

Growth and structural properties of step-graded, high Sn content GeSn layers on Ge

J. Hartmann, V. Delaye, D. Cooper, 2017 .

Spontaneous intercalation of Ga and In bilayers during plasma-assisted molecular beam epitaxy growth of GaN on graphene on SiC

H. Okuno, B. Daudin, A. Cros, 2019, Nanotechnology.

Remote epitaxy using graphene enables growth of stress-free GaN

A. Michon, A. Kolobov, H. Okuno, 2019, Nanotechnology.

Si Donor Incorporation in GaN Nanowires.

E. Robin, F. Donatini, J. Pernot, 2015, Nano letters.

Improvement of critical temperature of niobium nitride deposited on 8-inch silicon wafers thanks to an AlN buffer layer

E. Monroy, Y. Désières, C. Bougerol, 2021 .

Dopant radial inhomogeneity in Mg-doped GaN nanowires

P. Jouneau, C. Bougerol, E. Robin, 2018, Nanotechnology.