文
论文分享
演练场
杂货铺
论文推荐
字
编辑器下载
登录
注册
Angus T. Bryant
发表
Modeling of MOS-Side Carrier Injection in Trench-Gate IGBTs
Jerry L. Hudgins, Patrick R. Palmer, Enrico Santi, 2010, IEEE Transactions on Industry Applications.