Schäffler

发表

Type-II band alignment in Si/Si1-xGex quantum wells from photoluminescence line shifts due to optically induced band-bending effects: Experiment and theory.

Sauer, Baier, Herzog, 1994, Physical review. B, Condensed matter.

Transport properties of a Si/SiGe quantum point contact in the presence of impurities.

Kotthaus, Abstreiter, Wharam, 1995, Physical review. B, Condensed matter.

Sb/GaAs(110) interface: A reevaluation.

Hughes, Rieger, Ludeke, 1987, Physical review. B, Condensed matter.

Magnetotransport measurements and low-temperature scattering times of electron gases in high-quality Si/Si1-xGex heterostructures.

Abstreiter, Schäffler, Zrenner, 1992, Physical review. B, Condensed matter.

Electric-field-induced Raman scattering: Resonance, temperature, and screening effects.

Abstreiter, Schäffler, 1986, Physical Review B (Condensed Matter).

Electron transport through antidot superlattices in Si/Si0.7Ge0.3 heterostructures.

Holzmann, Kuehn, Kotthaus, 1994, Physical review. B, Condensed matter.

Resonant tunneling of holes in Si/SixGe1-x quantum-well structures.

Luy, Abstreiter, Schuberth, 1991, Physical Review B (Condensed Matter).

Comparative study of Y and other transition metals on GaAs(110).

Hughes, Himpsel, Ludeke, 1987, Physical review. B, Condensed matter.