Yung-Kwon Sung

A 51.84 Mbit/s CMOS VLSI Digital Frame Phase Aligner

Sang-Hoon Lee, Jung Hoon Ko, Chang Sup Shim, 1995 .

Properties of Pt/Cr layers due to fabrication conditions and thermal characteristics

Yung-Kwon Sung, Seung Hwan Yi, H. S. Jin, 1996, ICSE '96. 1996 IEEE International Conference on Semiconductor Electronics. Proceedings.

A study of hot-carrier-induced mismatch drift: a reliability issue for VLSI circuits

Sung-Mo Kang, Yung-Kwon Sung, Yoonjong Huh, 1998 .

A Comparison Between the Pellet-Type ZnO Sensor and the Thick-Film ZnO Sensor

Jong-Kwan Kim, Yung-Kwon Sung, Yoonjong Huh, 1993 .

Theoretical analysis on the automotive electronic compass sensor

Yung-Kwon Sung, Seung Hwan Yi, Jeong-Min Park, 1995, 1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings.

Avalanche Electron Injection and Bias Temperature Effects on MOS Diode

Yung-Kwon Sung, Chan-Won Park, Nae-In Lee, 1988 .

The Dependence of SiON/Si Interface Characteristic on Depositions Conditions Using Laser CVD

Jong-Kwan Kim, Yung-Kwon Sung, Ji-Ho Ryoo, 1995 .

Latchup characterization of high energy ion implanted new CMOS twin wells that comprised the BILLI (buried implanted layer for lateral isolation) and BL/CL (buried layer/connecting layer) structures

Jong-Kwan Kim, Yung-Kwon Sung, Young-Jong Lee, 1997, 1997 IEEE International Reliability Physics Symposium Proceedings. 35th Annual.

Hot-carrier-induced circuit degradation in actual DRAM

Hyungsoon Shin, Yung-Kwon Sung, Yoonjong Huh, 1995, Proceedings of 1995 IEEE International Reliability Physics Symposium.

Defects study of retrograde twin well CMOS that has MeV ion implanted buried layer

Jong-Kwan Kim, Insoo Kim, Youngho Kim, 1997 .

Analysis of circuit degradation due to hot-carrier effects in 64Mb DRAMs

Yung-Kwon Sung, Yoonjong Huh, Dooyoung Yang, 1996 .