Sanghoon Lee

Study on Time Constants of Random Telegraph Noise in Gate Leakage Current Through Hot-Carrier Stress Test

Hyungcheol Shin, Byung-Gook Park, Heung-Jae Cho, 2010, IEEE Electron Device Letters.

Characterization of oxide traps leading to RTN in high-k and metal gate MOSFETs

Hyungcheol Shin, Heung-Jae Cho, Dong Seup Lee, 2009, 2009 IEEE International Electron Devices Meeting (IEDM).