Alessio Pantellini

Performance assessment of GaN HEMT technologies for power limiter and switching applications

Antonio Nanni, Marco Peroni, Alessio Pantellini, 2010, The 5th European Microwave Integrated Circuits Conference.

Influence of fluorine-based dry etching on electrical parameters of AlGaN/GaN-on-Si High Electron Mobility Transistors

Claudio Lanzieri, Gaudenzio Meneghesso, Enrico Zanoni, 2013, 2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC).

Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs

Claudio Lanzieri, Gaudenzio Meneghesso, Enrico Zanoni, 2015, Microelectron. Reliab..

Reliability Investigation of GaN HEMTs for MMICs Applications

Claudio Lanzieri, Gaudenzio Meneghesso, Enrico Zanoni, 2014, Micromachines.

Field plate related reliability improvements in GaN-on-Si HEMTs

Claudio Lanzieri, Gaudenzio Meneghesso, Enrico Zanoni, 2012, Microelectron. Reliab..

Impact of field-plate geometry on the reliability of GaN-on-SiC HEMTs

Claudio Lanzieri, Gaudenzio Meneghesso, Enrico Zanoni, 2013, Microelectron. Reliab..

Electro-thermal characterization of AlGaN/GaN HEMT on Silicon Microstrip Technology

Andrea Irace, Claudio Lanzieri, Giovanni Breglio, 2011, Microelectron. Reliab..

Role of buffer doping and pre-existing trap states in the current collapse and degradation of AlGaN/GaN HEMTs

Claudio Lanzieri, Gaudenzio Meneghesso, Enrico Zanoni, 2014, 2014 IEEE International Reliability Physics Symposium.

Evaluation of FET performance and restrictions by low-frequency measurements

Franco Giannini, Valeria Vadala, Antonio Raffo, 2014, 2014 International Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits (INMMiC).

Buffer Traps in Fe-Doped AlGaN/GaN HEMTs: Investigation of the Physical Properties Based on Pulsed and Transient Measurements

Claudio Lanzieri, Gaudenzio Meneghesso, Enrico Zanoni, 2014, IEEE Transactions on Electron Devices.