Ning Duan

High-speed and low-noise SACM avalanche photodiodes with an impact-ionization-engineered multiplication region

J.C. Campbell, Ning Li, L.A. Coldren, 2005, IEEE Photonics Technology Letters.

A long-wavelength photodiode on InP using lattice-matched GaInAs-GaAsSb type-II quantum wells

J.C. Campbell, R. Sidhu, A. Holmes, 2005, IEEE Photonics Technology Letters.

Detrimental effect of impact ionization in the absorption region on the frequency response and excess noise performance of InGaAs-InAlAs SACM avalanche photodiodes

X. Li, J.C. Campbell, Ning Li, 2005, IEEE Journal of Quantum Electronics.