Marc Bescond

发表

Hot-carrier solar cell NEGF-based simulations

Nicolas Cavassilas, Fabienne Michelini, Marc Bescond, 2016, SPIE OPTO.

Minibands modeling in strain-balanced InGaAs/GaAs/GaAsP cells

Masakazu Sugiyama, Nicolas Cavassilas, Marc Bescond, 2017, OPTO.

Ballistic Quantum Simulators for Studying Variability in Nanotransistors

Asen Asenov, A. Svizhenko, John R. Barker, 2008 .

Single donor induced negative differential resistance in silicon n-type nanowire metal-oxide-semiconductor transistors

Fabienne Michelini, Marc Bescond, L. Raymond, 2010 .

Full-band study of current across silicon nanowire transistors

Nicolas Cavassilas, Fabienne Michelini, Marc Bescond, 2007 .

Modeling of nanoscale solar cells: The Green's function formalism

Nicolas Cavassilas, Fabienne Michelini, Marc Bescond, 2014 .

Theoretical comparison of multiple quantum wells and thick-layer designs in InGaN/GaN solar cells

Nicolas Cavassilas, Fabienne Michelini, Marc Bescond, 2014 .

Atomic-scale modeling of double-gate MOSFETs using a tight-binding Green’s function formalism

Daniela Munteanu, Marc Bescond, Jean-Luc Autran, 2004 .

Effective-mass approach for n-type semiconductor nanowire MOSFETs arbitrarily oriented

Nicolas Cavassilas, Marc Bescond, M. Lannoo, 2007 .

Phonon limited anisotropic quantum transport in phosphorene field effect transistors

Santanu Mahapatra, Marc Bescond, Madhuchhanda Brahma, 2019, Journal of Applied Physics.

Theoretical comparison of 3C-SiC and Si nanowire FETs in ballistic and diffusive regimes

Marc Bescond, Konstantinos Zekentes, Edwige Bano, 2007 .