G.B. Alers

J-ramp on sub-3 nm dielectrics: noise as a breakdown criterion

G.B. Alers, B.E. Weir, M.R. Frei, 1999, 1999 IEEE International Reliability Physics Symposium Proceedings. 37th Annual (Cat. No.99CH36296).

Electromigration improvement with PDL TiN(Si) barrier in copper dual damascene structures

H. Cox, L. Chen, M. Danek, 2003, 2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual..

Ultra-thin gate dielectrics: they break down, but do they fail?

D. Hwang, P.J. Silverman, F. Baumann, 1997, International Electron Devices Meeting. IEDM Technical Digest.