Y. H. Wang

A normal‐incidence type‐II quantum‐well infrared photodetector using an indirect AlAs/Al0.5Ga0.5As system grown on (110) GaAs for mid‐ and long‐wavelength multicolor detection

Sheng S. Li, Y. H. Wang, M. O. Manasreh, 1993 .

Ultralow dark current p‐type strained‐layer InGaAs/InAlAs quantum well infrared photodetector with background limited performance for T≤100 K

Sheng S. Li, J. Chu, Y. H. Wang, 1994 .

A study of the coupling efficiency versus grating periodicity in a normal incident GaAs/AlGaAs multiquantum well infrared detector

Larry S. Yu, Yung-Chung Kao, Y. H. Wang, 1992 .