Etgens

Delayed relaxation by surfactant action in highly strained III-V semiconductor epitaxial layers.

Grandjean, Massies, Etgens, 1992, Physical review letters.

Resonant Surface Magnetic X-Ray Diffraction from Co3Pt(111).

Ferrer, Etgens, van der Vegt HA, 1996, Physical review letters.

Interplay between atomic and mesoscopic order on gold vicinal surfaces

Garreau, Lecoeur, Etgens, 2000, Physical review letters.

ZnTe/GaAs(001): Growth mode and strain evolution during the early stages of molecular-beam-epitaxy heteroepitaxial growth.

Tatarenko, Sauvage-Simkin, Jedrecy, 1993, Physical review. B, Condensed matter.

Atomic Structure of the c(4 x 2) Surface Reconstruction of Ge(001) as Determined by X-Ray Diffraction.

Ferrer, Etgens, van der Vegt HA, 1995, Physical review letters.

Disordering of the low-temperature c(4 x 2) structure of Ge(001) to the (2 x 1) reconstruction: Evidence for a mean-field transition.

Ferrer, Etgens, van der Vegt HA, 1996, Physical review. B, Condensed matter.

Cd and Te desorption from (001), (111)B, and (110) CdTe surfaces.

Brun, Tatarenko, Véron, 1994, Physical review. B, Condensed matter.

Indium-induced lowering of the Schwoebel barrier in the homoepitaxial growth of Cu(100).

Ferrer, Vlieg, Etgens, 1995, Physical review. B, Condensed matter.