S. Mehta

Time dependent dielectric breakdown of SiN, SiBCN and SiOCN spacer dielectrics

R. G. Southwick, J. Stathis, E. Wu, 2017, 2017 IEEE International Reliability Physics Symposium (IRPS).

Impact of back bias on ultra-thin body and BOX (UTBB) devices

M. Vinet, T. Skotnicki, L. Grenouillet, 2011, 2011 Symposium on VLSI Technology - Digest of Technical Papers.

Tunneling currents and reliability of atomic-layer-deposited SiBCN for low-κ spacer dielectrics

R. G. Southwick, T. Yamashita, J. Stathis, 2014, 2014 IEEE International Reliability Physics Symposium.