Bong-Seok Kim

An alternative interpretation of hot electron interface degradation in NMOSFETs: isotope results irreconcilable with major defect generation by holes?

K. Hess, J. Lyding, Young-Wug Kim, 1999 .

Application of the deuterium sintering process to improve the device design rule in reducing plasma induced damages

K. Hess, J. Lyding, K. Cheng, 1999, International Symposium on Plasma Process-Induced Damage.

Suppression of the Floating-Body Effect of Vertical-Cell DRAM With the Buried Body Engineering Method

Y. Hwang, H. Hong, Byoungdeog Choi, 2018, IEEE Transactions on Electron Devices.