K. W. Mah

发表

Growth optimization of InGaP layers by solid source molecular beam epitaxy for the application of InGaP/In0.2Ga0.8As/GaAs high electron mobility transistor structures

Soon Fatt Yoon, G. I. Ng, K. Radhakrishnan, 2000 .

Study of photoluminescence at 3.310 and 3.368 eV in GaN/sapphire(0001) and GaN/GaAs(001) grown by liquid-target pulsed-laser deposition

James G. Lunney, Jean-Paul Mosnier, Enda McGlynn, 2002 .

Photoluminescence study of GaN grown by pulsed laser deposition in nitrogen atmosphere

J. Lunney, D. O'Mahony, M. Henry, 2001 .

Effects of substrate temperature on the properties of In0.48Ga0.52P grown by molecular-beam epitaxy using a valved phosphorus cracker cell

S. Yoon, H. Zheng, K. W. Mah, 1998 .

Effect of V/III ratio and temperature dependence of carrier concentration in partially ordered and disordered Ga0.52In0.48P grown on GaAs substrates

S. Yoon, H. Zheng, K. W. Mah, 2000 .

The effect of elastic strain on the optical properties of InGaP/GaAs grown using a valved phosphorus cracker cell in solid source MBE

S. Yoon, K. W. Mah, Haiqun Zheng, 1998 .

V/III ratio and silicon doping effects on the properties of In1−xGaxP/GaAs grown by solid source molecular beam epitaxy

S. Yoon, H. Zheng, K. W. Mah, 2000 .

Effects of V/III Ratio on the Properties of In1-xGaxP/GaAs Grown by a Valved Phosphorus Cracker Cell in Solid Source Molecular Beam Epitaxy

S. Yoon, K. W. Mah, Haiqun Zheng, 1999 .

Defect luminescence of GaN grown by pulsed laser deposition

J. Lunney, D. O'Mahony, M. Henry, 2001 .

Electrical and optical properties of InP grown by molecular beam epitaxy using a valved phosphorus cracker cell

G. Ng, S. Yoon, H. Zheng, 1998 .

Molecular Beam Epitaxial Growth of InP Using a Valved Phosphorus Cracker Cell: Optimization of Electrical, Optical and Surface Morphology Characteristics

G. Ng, S. Yoon, H. Zheng, 1998, Conference Proceedings. 1998 International Conference on Indium Phosphide and Related Materials (Cat. No.98CH36129).

Electrical and optical properties of InP grown at different cracking temperature and V/III ratio using a valve phosphorous cracker cell

S. Yoon, H. Zheng, K. W. Mah, 1998 .

Observation of weak ordering effects and surface morphology study of InGaP grown by solid source molecular beam epitaxy

S. Yoon, H. Zheng, K. W. Mah, 2000 .

Transport and photoluminescence of silicon-doped GaInP grown by a valved phosphorus cracker cell in solid source molecular beam epitaxy

S. Yoon, K. W. Mah, H. Q. Zheng, 1999 .

Solid source molecular beam epitaxial growth of In0.48Ga0.52P on GaAs substrates using a valved phosphorus cracker cell

S. Yoon, K. W. Mah, Haiqun Zheng, 1999 .

Photoluminescence and electron transport properties of silicon-doped Ga/sub 0.52/In/sub 0.48/P/GaAs grown using a valved phosphorus cracker cell in solid source molecular beam epitaxy

S. Yoon, K. W. Mah, H.Q. Zheng, 2000, Conference Proceedings. 2000 International Conference on Indium Phosphide and Related Materials (Cat. No.00CH37107).