Jiayang Zhang

发表

Hot Carrier Degradation-Induced Dynamic Variability in FinFETs: Experiments and Modeling

Ru Huang, Zhuoqing Yu, Runsheng Wang, 2020, IEEE Transactions on Electron Devices.

Comprehensive Study on the “Anomalous” Complex RTN in Advanced Multi-Fin Bulk FinFET Technology

Ru Huang, Zhe Zhang, Shaofeng Guo, 2018, 2018 IEEE International Electron Devices Meeting (IEDM).

New insights into the hot carrier degradation (HCD) in FinFET: New observations, unified compact model, and impacts on circuit reliability

Ru Huang, Zhuoqing Yu, Runsheng Wang, 2017, 2017 IEEE International Electron Devices Meeting (IEDM).