H. Yang

Plasma processed ultra-thin SiO2 interfaces for advanced silicon NMOS and PMOS devices: applications to Si-oxide/Si oxynitride, Si-oxide/Si nitride and Si-oxide/transition metal oxide stacked gate dielectrics

Gerald Lucovsky, G. Lucovsky, Y. Wu, 2000 .

Integration of ultrathin (1.6/spl sim/2.0 nm) RPECVD oxynitride gate dielectrics into dual poly-Si gate submicron CMOSFETs

G. Lucovsky, G. Lucovsky, H. Yang, 1999, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318).

The effects of interfacial suboxide transition regions on direct tunneling in oxide and stacked oxide-nitride gate dielectrics

J. E. Rowe, Gerald Lucovsky, J. W. Keister, 1999 .

Tunneling currents through ultrathin oxide/nitride dual layer gate dielectrics for advanced microelectronic devices

Gerald Lucovsky, G. Lucovsky, H. Niimi, 1998 .