Allan

发表

分析英特尔710 Enterprise SSD

Allan, Yogasingam, 2012 .

Transocean's 5th gen rigs efficient record-setters

Chip Keener, Ibukun Keji-Ajayi, Allan, 2003 .

Acknowledgement to reviewers

Samir, Paulo, Allan, 2017, International Journal of Computer Assisted Radiology and Surgery.

DISCUSSION. SWING BRIDGE OVER THE RIVER AVON AT BRISTOL AND THE PYRMONT BRIDGE, SYDNEY, N.S.W.

G E W Cruttwell, Allan, C O Burge, .

DISCUSSION. ON SUBMERGING TELEGRAPHIC CABLES.

C W Siemens, G P Bidder, J A Longridge, .

The method, device and computer program for selecting a media transfer control function based on the monitoring of resources of media transition functions

Allan, Orange Personal Com. Serv. Lt Bradley Stoke c, 2002 .

Parametric Modeling of Static Three-Dimensional Problem of Buried Pipeline through the Coupling between a Finite Cylindrical Shell Element and Special Boundary Elements

Lima, Santos, Carlos, 2015 .

Solution of Schrödinger's equation for large systems.

Allan, Payne, M. Teter, 1989, Physical review. B, Condensed matter.

Theoretical aspects of the luminescence of porous silicon.

Allan, M. Lannoo, C. Delerue, 1993, Physical review. B, Condensed matter.

Theory of excitonic exchange splitting and optical Stokes shift in silicon nanocrystallites: Application to porous silicon.

Allan, Mártin, Delerue, 1994, Physical review. B, Condensed matter.

Spin orientation at semiconductor heterointerfaces.

Etienne, Allan, Richards, 1995, Physical review. B, Condensed matter.

Nature of luminescent surface states of semiconductor nanocrystallites.

Allan, M. Lannoo, C. Delerue, 1996, Physical review letters.

Nonlocal pseudopotentials in molecular-dynamical density-functional theory: Application to SiO2.

Allan, M. Teter, Teter, 1987, Physical review letters.

Stability and crystal structure of BC8 germanium.

Allan, Wright, Loveday, 1993, Physical review. B, Condensed matter.

Dielectric tensor, effective charges, and phonons in alpha -quartz by variational density-functional perturbation theory.

Allan, M. Teter, Teter, 1992, Physical review letters.

Electric field dependence of the binding energy of shallow donors in GaAs-Ga1-xAlxAs quantum wells.

Allan, Brum, Priester, 1985, Physical review. B, Condensed matter.

Molecular dynamics and ab initio total energy calculations.

Allan, Joannopoulos, Payne, 1986, Physical review letters.

Interatomic force constants from first principles: The case of alpha -quartz.

Allan, Charlier, Teter, 1994, Physical review. B, Condensed matter.

First-principles study of several hypothetical silica framework structures.

Gibbs, Allan, M. Teter, 1995, Physical review. B, Condensed matter.

Linear optical response in silicon and germanium including self-energy effects.

Allan, Levine, Zachary H. Levine, 1989, Physical review letters.

Ab initio study of MnO and NiO.

Harrison, Saunders, Allan, 1994, Physical review. B, Condensed matter.

Coulomb three-body effects in low-energy impact ionization of H(1s).

Jung, Walters, Allan, 1996, Physical review. A, Atomic, molecular, and optical physics.

Demonstration of a Shell-Core Structure in Layered CdSe-ZnSe Small Particles by X-ray Photoelectron and Auger Spectroscopies

Alan Campion, Stephen E. Webber, Allan, 2001 .

N 95-23808 RESULTS FROM THE HEAVY IONS IN SPACE ( HIIS ) EXPERIMENT ON THE IONIC CHARGE STATE OF SOLAR ENERGETIC PARTICLES

Allan, E. Hulburt, James, 2022 .

Band structure of CsSnBr3.

Allan, Lannoo, Lippens, 1990, Physical review. B, Condensed matter.

Auger and Coulomb charging effects in semiconductor nanocrystallites.

Allan, Muller, Mártin, 1995, Physical review letters.

Theory of optical properties of polysilanes: Comparison with porous silicon.

Allan, Delerue, Lannoo, 1993, Physical review. B, Condensed matter.

ON THE HEAVY IONS 93-29645 IN SPACE ( HIIS ) EXPERIMENT

Allan, E. Hulburt, James, 2022 .

Tight-binding prediction of tetrahedral semiconductor ionization potentials.

Allan, Lannoo, Lefèbvre, 1989, Physical review. B, Condensed matter.

Pressure dependence of the Imma phase of silicon.

Allan, Wright, McMahon, 1994, Physical review. B, Condensed matter.

New theoretical approach of transition-metal impurities in semiconductors.

Allan, Delerue, Lannoo, 1989, Physical review. B, Condensed matter.

Identification of the isolated arsenic antisite defect in electron-irradiated gallium arsenide and its relation to the EL2 defect.

Allan, Delerue, Lannoo, 1992, Physical review. B, Condensed matter.

Band-edge deformation potentials in a tight-binding framework.

Allan, Lannoo, Priester, 1988, Physical review. B, Condensed matter.

Imma phase of germanium at ~80 GPa.

Allan, Liu, Belmonte, 1996, Physical review. B, Condensed matter.

High-pressure crystal structure of HgTe-IV.

Allan, Wright, McMahon, 1996, Physical review. B, Condensed matter.

Phase transitions in CdTe to 5 GPa.

Allan, Wright, McMahon, 1993, Physical review. B, Condensed matter.

Observation of a high-pressure cinnabar phase in CdTe.

Allan, Wright, McMahon, 1993, Physical review. B, Condensed matter.

Tight-binding calculation of the band offset at the Ge-GaAs (110) interface using a local charge-neutrality condition.

Allan, Lannoo, Priester, 1986, Physical review. B, Condensed matter.

Crystal and electronic structures and electrical, magnetic, and optical properties of two copper tetrahalide salts of bis(ethylenedithio)-tetrathiafulvalene.

Allan, Day, Friend, 1994, Physical review. B, Condensed matter.

Impurity and Landau-level electron lifetimes in n-type GaAs.

Allan, Black, Gornik, 1985, Physical review. B, Condensed matter.

Surface core-level shifts and relaxation of group-IVA-element chalcogenide semiconductors.

Allan, 1991, Physical review. B, Condensed matter.

Negative-U character of the adsorption on semiconductor surfaces: Application to metals on GaAs(110).

Allan, Lannoo, 1991, Physical review letters.

Structure and stability of several high-pressure crystalline polymorphs of silica.

Allan, Tse, Klug, 1995, Physical review. B, Condensed matter.

Coulomb three-body effects in (e,2e) collisions: The ionization of H in coplanar symmetric geometry.

Jung, Walters, Allan, 1994, Physical review. A, Atomic, molecular, and optical physics.

Neutron- and x-ray-diffraction measurements of the bulk modulus of boron.

Hamel, Allan, Besson, 1993, Physical review. B, Condensed matter.

Hydrogenic impurity levels, dielectric constant, and Coulomb charging effects in silicon crystallites.

Allan, Mártin, Delerue, 1995, Physical review. B, Condensed matter.

Dipole activity of surface phonons on Si(111)2 x 1.

Allan, Alerhand, Melé, 1985, Physical review letters.

Theory of the chemical shift at relaxed (110) surfaces of III-V semiconductor compounds.

Allan, Lannoo, Priester, 1987, Physical review letters.

Elastic constants of a Si/Ge superlattice and of bulk Si and Ge.

Allan, Wei, Wilkins, 1992, Physical review. B, Condensed matter.

Electronic structure of erbium disilicide.

Allan, Christensen, Lefèbvre, 1993, Physical Review B (Condensed Matter).

Optical second-harmonic generation in III-V semiconductors: Detailed formulation and computational results.

Allan, Levine, 1991, Physical review. B, Condensed matter.

Quasiparticle calculation of the dielectric response of silicon and germanium.

Allan, Levine, D. Allan, 1991, Physical review. B, Condensed matter.

Calculation of the nonlinear susceptibility for optical second-harmonic generation in III-V semiconductors.

Allan, Levine, 1991, Physical review letters.

Role of localized interface states at type-II heterojunctions.

Allan, Priester, Foulon, 1994, Physical review. B, Condensed matter.

Electronic structure of binary and ternary Ga or As oxides.

Allan, Albanesi, Lefèbvre, 1992, Physical review. B, Condensed matter.

Theoretical study of the electronic structure of the incoherent {211} Sigma =3 grain boundary in Ge by the recursion approach.

Allan, Lannoo, Mauger, 1987, Physical review. B, Condensed matter.

Large local-field effects in the second-harmonic susceptibility of crystalline urea.

Allan, Levine, 1993, Physical Review B (Condensed Matter).

Saturation and voltage quenching of porous-silicon luminescence and the importance of the Auger effect.

Allan, Muller, Mártin, 1995, Physical review. B, Condensed matter.

Theoretical Mössbauer isomer shift of antimony chalcogenides.

Allan, Lannoo, Lefèbvre, 1988, Physical review. B, Condensed matter.

Screening in Semiconductor Nanocrystallites and Its Consequences for Porous Silicon.

Allan, Delerue, Lannoo, 1995, Physical review letters.

Optical cross sections associated with deep-level impurities in semiconductors.

Allan, Petit, Lannoo, 1986, Physical review. B, Condensed matter.

Strained silicon: A dielectric-response calculation.

Allan, Wei, Wilkins, 1992, Physical review. B, Condensed matter.

Electronic structure of semiconductor oxides: InPO4, In(PO3)3, P2O5, SiO2, AlPO4, and Al(PO3)3.

Allan, Lannoo, Lefèbvre, 1990, Physical Review B (Condensed Matter).

Self-consistent band-edge deformation potentials in a tight-binding framework.

Allan, Lannoo, Priester, 1988, Physical review. B, Condensed matter.

Theoretical calculation of band-edge discontinuities near a strained heterojunction: Application to (In,Ga)As/GaAs.

Allan, Lannoo, Priester, 1988, Physical review. B, Condensed matter.

Crystal structure of ZnTe III at 16 GPa.

Allan, Wright, McMahon, 1994, Physical review letters.

Excitonic and quasiparticle gaps in Si nanocrystals

Allan, Delerue, Lannoo, 2000, Physical review letters.

Comment on "Size dependence of excitons in silicon nanocrystals"

Allan, Delerue, Lannoo, 1996, Physical review letters.