W.H. Liu

New statistical model to decode the reliability and weibull slope of high-κ and interfacial layer in a dual layer dielectric stack

N. Raghavan, X. Li, K. Pey, 2010, 2010 IEEE International Reliability Physics Symposium.

Random telegraph noise reduction in metal gate high-κ stacks by bipolar switching and the performance boosting technique

T. Kauerauf, N. Raghavan, X. Wu, 2011, 2011 International Reliability Physics Symposium.

New insight into the TDDB and breakdown reliability of novel high-к gate dielectric stacks

N. Raghavan, X. Wu, X. Li, 2010, 2010 IEEE International Reliability Physics Symposium.