P. G. Eliseev

发表

AlGaInP/GaInP visible laser diodes with extremely high characteristic temperature T0

Vladimir Alekseevic Gorbylev, Alexander A. Chelny, Alexander Aluev, 1995, Photonics West.

BRIEF COMMUNICATIONS: Electrical diagnostics of the operating conditions in a monitoring amplifier based on a laser diode

P. G. Eliseev, Vu van Luc, Margarita A Man'ko, 1982 .

Study of strained-layer InGaAs/GaAs SQW RW lasers including analysis of internal coupling of modes and antiguiding effects

Goetz Erbert, J. Maege, P. G. Eliseev, 1994, Photonics West - Lasers and Applications in Science and Engineering.

BRIEF COMMUNICATIONS: Reduction of the threshold current of InGaAsP/lnP heterolasers by unidirectional compression

P. G. Eliseev, B N Sverdlov, N. Shokhudzhaev, 1984 .

Radiative Processes in InGaN Quantum Wells

P. G. Eliseev, 1999 .

Optical strength of semiconductor laser materials

P. G. Eliseev, P. Eliseev, 1996 .

CONTROL OF LASER RADIATION PARAMETERS: Interferometric modulation in an optical amplifier based on an InGaAsP/lnP heterostructure

P. G. Eliseev, M. V. Tsotsoriya, V. P. Duraev, 1992 .

Line shape function for semiconductor laser modelling

P. G. Eliseev, 1997 .

Semiconductor optical amplifiers: multifunctional possibilities, photoresponse and phase shift properties

P. G. Eliseev, P. Eliseev, Vu Van Luc, 1995 .

Study of the single-mode injection laser

P. G. Eliseev, A. S. Logginov, A. Bogatov, 1973 .

InGaSbAs injection lasers

P. G. Eliseev, B. Sverdlov, P. Eliseev, 1987 .

Degradation of injection lasers

P. G. Eliseev, P. Eliseev, 1973 .