James A. Slinkman

Efficient Quantum Correction Model for Multi-dimensional CMOS Simulations

MeiKei Ieong, R. Logan, James A. Slinkman, 1998 .

Analysis of snubber-clamped diode-string mixed voltage interface ESD protection network for advanced microprocessors☆

Steven H. Voldman, James A. Slinkman, Gianfranco Gerosa, 1996 .

Accurate prediction and proposed method of measurement of the Casimir effect in silicon MOS devices

James A. Slinkman, 2004, SPIE Optics + Photonics.

Shallow trench isolation double-diobe electrostatic discharge circuit and interaction with DRAM output circuitry

Steven H. Voldman, James A. Slinkman, Vaughn P. Gross, 1993 .

The use of simulation in semiconductor technology development

Jack A. Mandelman, T. D. Linton, Orest Bula, 1990 .

The effects of strain on dopant diffusion in silicon

Mark E. Law, James A. Slinkman, Heemyong Park, 1993, Proceedings of IEEE International Electron Devices Meeting.

A Thin-Film SOI 180nm CMOS RF Switch Technology

Alvin J. Joseph, James S. Dunn, Dimitris P. Ioannou, 2009 .

Two‐dimensional surface dopant profiling in silicon using scanning Kelvin probe microscopy

Albert K. Henning, James A. Slinkman, James M. Never, 1995 .

Lateral tapered active field-plate LDMOS device for 20V application in thin-film SOI

Alvin J. Joseph, Mark D. Jaffe, James A. Slinkman, 2013, 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

Lateral dopant profiling with 200 nm resolution by scanning capacitance microscopy

Hemantha K. Wickramasinghe, Clayton C. Williams, James A. Slinkman, 1989 .