T.H. Hsu

Highly reliable 2-bit/cell nitride trapping flash memory using a novel array-nitride-sealing (ANS) ONO process

Chih-Yuan Lu, Yen-Hao Shih, K.C. Chen, 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

Explore physical origins of resistance drift in phase change memory and its implication for drift-insensitive materials

Jing Li, H. L. Lung, Y. Zhu, 2011, 2011 International Electron Devices Meeting.

A low power phase change memory using thermally confined TaN/TiN bottom electrode

R. Dasaka, S. Kim, Y. Zhu, 2011, 2011 International Electron Devices Meeting.