Kazuhiko Endo

发表

Vertical double-gate MOSFET device technology

Meishoku Masahara, Yongxun Liu, Kazuhiko Endo, 2008 .

Enhancing SRAM performance by advanced FinFET device and circuit technology collaboration for 14nm node and beyond

Meishoku Masahara, Shinji Migita, Kazuhiko Endo, 2013, 2013 Symposium on VLSI Circuits.

Variability analysis of FinFET-based devices and circuits considering electrical confinement and width quantization

Kaustav Banerjee, Kazuhiko Endo, Seid Hadi Rasouli, 2009, 2009 IEEE/ACM International Conference on Computer-Aided Design - Digest of Technical Papers.

Vertical Double-Gate MOSFET Device Technology

Meishoku Masahara, Yongxun Liu, Kazuhiko Endo, 2006 .

Vertical ultrathin‐channel multi‐gate MOSFETs (MuGFETs): technological challenges and future developments

Meishoku Masahara, Yongxun Liu, Kazuhiko Endo, 2009 .

Post-Si Nano Device Technology

Kazuhiko Endo, 2019, 2019 IEEE 13th International Conference on ASIC (ASICON).

Variability Analysis of TiN FinFET SRAM Cells and Its Compensation by Independent-DG FinFETs

Hiromi Yamauchi, Kunihiro Sakamoto, Takashi Matsukawa, 2010, IEEE Electron Device Letters.

(Invited) On-Current Variability Sources of FinFETs: Analysis and Perspective for 14nm-Lg Technology

Meishoku Masahara, Shin-ichi O'uchi, Yongxun Liu, 2012 .

0.8-V rail-to-rail operational amplifier with near-Vt gain-boosting stage fabricated in FinFET technology for IoT sensor nodes

Takashi Matsukawa, Meishoku Masahara, Tadashi Nakagawa, 2015, 2015 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S).

May the fourth (terminal) be with you - circuit design beyond FinFET

Kunihiro Sakamoto, Toshiyuki Tsutsumi, Takashi Matsukawa, 2010, 2010 International Electron Devices Meeting.

Variability origins of FinFETs and perspective beyond 20nm node

Takashi Matsukawa, Meishoku Masahara, Shin-ichi O'uchi, 2011, IEEE 2011 International SOI Conference.

Advanced DG-MOSFETs Process Technologies

Kunihiro Sakamoto, M. Masahara, Shin-ichi O'uchi, 2007 .

Analytical Thermal Model for Self-Heating in Advanced FinFET Devices With Implications for Design and Reliability

Kaustav Banerjee, Chuan Xu, Kazuhiko Endo, 2013, IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems.

Variation behavior of tunnel-FETs originated from dopant concentration at source region and channel edge configuration

Takashi Matsukawa, Meishoku Masahara, K. Fukuda, 2014, 2014 44th European Solid State Device Research Conference (ESSDERC).

Advanced FinFET technologies for boosting SRAM performance

Kazuhiko Endo, 2017, 2017 IEEE 12th International Conference on ASIC (ASICON).

Correlative analysis between characteristics of 30-nm LG FinFETs and SRAM performance

Hiromi Yamauchi, Kunihiro Sakamoto, Takashi Matsukawa, 2011, 2011 International Electron Devices Meeting.

Subjective Evaluation of High Resolution Recordings in PCM and DSD Audio Formats

Atsushi Marui, Toru Kamekawa, Kazuhiko Endo, 2014 .

INVITED PAPER Special Section on Solid-State Circuit Design—Architecture, Circuit, Device and Design Methodology Independent-Double-Gate FinFET SRAM Technology

Nonmembers, Meishoku Masahara, Yongxun Liu, 2013 .

Towards large-scale superconducting quantum annealers: 2.5D packaging technology and application specific architecture

Hiroshi Nakagawa, Toshihiro Katashita, Shuichi Nagasawa, 2018 .

Fabrication and Power-Management Demonstration of Four-Terminal FinFETs

Meishoku Masahara, Shin-ichi O'uchi, Kazuhiko Endo, 2007 .

High-Frequency Precise Characterization of Intrinsic FinFET Channel

Hiroki Ishikuro, Kunihiro Sakamoto, Hanpei Koike, 2012, IEICE Trans. Electron..

Suppression of Charges in Al~2O~3 Gate Dielectric and Improvement of MOSFET Performance by Plasma Nitridation

Toru Tatsumi, Satoshi Kamiyama, T. Iwamoto, 2004 .

FinFET-Based Flex-Vth SRAM Design for Drastic Standby-Leakage-Current Reduction

Kunihiro Sakamoto, Hanpei Koike, Takashi Matsukawa, 2008, IEICE Trans. Electron..

PBTI for N-type tunnel FinFETs

Hiromi Yamauchi, Yuki Ishikawa, Takashi Matsukawa, 2015, 2015 International Conference on IC Design & Technology (ICICDT).

Independent double-gate FinFET SRAM technology

Takashi Matsukawa, Meishoku Masahara, Yongxun Liu, 2011, The 4th IEEE International NanoElectronics Conference.

Performance limit of parallel electric field tunnel FET and improvement by modified gate and channel configurations

Takashi Matsukawa, Meishoku Masahara, K. Fukuda, 2013, 2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC).

A 0.7-V Opamp in Scaled Low-Standby-Power FinFET Technology

Hiromi Yamauchi, Kunihiro Sakamoto, Hanpei Koike, 2012, IEICE Trans. Electron..

Work-function variation induced fluctuation in bias-temperature-instability characteristics of emerging metal-gate devices and implications for digital design

Kaustav Banerjee, Kazuhiko Endo, Seid Hadi Rasouli, 2010, 2010 IEEE/ACM International Conference on Computer-Aided Design (ICCAD).

Analysis of charge-to-hot-carrier degradation in Ge pFinFETs

Kazuhiko Endo, Hiroshi Oka, Wataru Mizubayashi, 2020, 2020 IEEE International Reliability Physics Symposium (IRPS).

Grain-Orientation Induced Work Function Variation in Nanoscale Metal-Gate Transistors—Part I: Modeling, Analysis, and Experimental Validation

Kazuhiko Endo, K Banerjee, K. Banerjee, 2010, IEEE Transactions on Electron Devices.

Low Temperature, Beam-Orientation-Dependent, Lattice-Plane-Independent, and Damage-Free Oxidation for Three-Dimensional Structure by Neutral Beam Oxidation

Takashi Matsukawa, Meishoku Masahara, Seiji Samukawa, 2009 .

Electron mobility in multi-FinFET with a (111) channel surface fabricated by orientation-dependent wet etching

Hiromi Yamauchi, Kenichi Ishii, M. Masahara, 2005 .

Variability Analysis of TiN Metal-Gate FinFETs

Hiromi Yamauchi, Kunihiro Sakamoto, Takashi Matsukawa, 2010, IEEE Electron Device Letters.

Performance Enhancement of Tunnel Field-Effect Transistors by Synthetic Electric Field Effect

Takashi Matsukawa, Meishoku Masahara, Shinji Migita, 2014, IEEE Electron Device Letters.

Demonstration and Analysis of Accumulation-Mode Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor

Kenichi Ishii, Takashi Matsukawa, Meishoku Masahara, 2006 .

Silicon nanodisk array with a fin field-effect transistor for time-domain weighted sum calculation toward massively parallel spiking neural networks

Takashi Morie, Yasuo Takahashi, Hirofumi Tanaka, 2016 .

Dual metal gate FinFET integration by Ta/Mo diffusion technology for Vt reduction and multi-Vt CMOS application

Hiromi Yamauchi, Kunihiro Sakamoto, Kenichi Ishii, 2008 .

Comprehensive analysis of Ion variation in metal gate FinFETs for 20nm and beyond

Hiromi Yamauchi, Kunihiro Sakamoto, Takashi Matsukawa, 2011, 2011 International Electron Devices Meeting.

Spike-based time-domain weighted-sum calculation using nanodevices for low power operation

Takashi Morie, Yasuo Takahashi, Haichao Liang, 2016, 2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO).

Enhancing Noise Margins of Fin-Type Field Effect Transistor Static Random Access Memory Cell by Using Threshold Voltage-Controllable Flexible-Pass-Gates

Hiromi Yamauchi, Kunihiro Sakamoto, Kenichi Ishii, 2009 .

Fabrication and Characterization of NOR-Type Tri-Gate Flash Memory with Improved Inter-Poly Dielectric Layer by Rapid Thermal Oxidation

Hiromi Yamauchi, Kunihiro Sakamoto, T. Hayashida, 2012 .

Demonstration of Dopant Profiling in Ultrathin Channels of Vertical-Type Double-Gate Metal-Oxide-Semiconductor Field-Effect-Transistor by Scanning Nonlinear Dielectric Microscopy

Takashi Matsukawa, Meishoku Masahara, Kazuhiko Endo, 2005 .

Design of SOI FinFET on 32 nm technology node for low standby power (LSTP) operation considering gate-induced drain leakage (GIDL)

Byung-Gook Park, Seongjae Cho, Meishoku Masahara, 2009, 2009 International Semiconductor Device Research Symposium.

Independent double-gate FinFET SRAM technology

Takashi Matsukawa, Meishoku Masahara, Kazuhiko Endo, 2011 .