Joachim Wuerfl

(Invited) High Voltage Normally-Off Transistors and Efficient Schottky Diodes based on GaN Technology

Frank Brunner, Arne Knauer, Markus Weyers, 2011 .

GaN-Based Power HEMTs: Parasitic, Reliability and High Field Issues

Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, 2013 .

Time-Dependent Failure of GaN-on-Si Power HEMTs With p-GaN Gate

Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, 2016, IEEE Transactions on Electron Devices.