Melani Cho

(Invited) High Voltage Normally-Off Transistors and Efficient Schottky Diodes based on GaN Technology

Frank Brunner, Arne Knauer, Markus Weyers, 2011 .

Device Breakdown and Dynamic effects in GaN Power Switching Devices: Dependencies on Material Properties and Device Design

Frank Brunner, Joachim Würfl, Arne Knauer, 2013 .